NTD3055-150-1G ON Semiconductor, NTD3055-150-1G Datasheet - Page 3

MOSFET N-CH 60V 9A IPAK

NTD3055-150-1G

Manufacturer Part Number
NTD3055-150-1G
Description
MOSFET N-CH 60V 9A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD3055-150-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.122 Ohms
Forward Transconductance Gfs (max / Min)
5.4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
28.8 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD3055-150-1G
Manufacturer:
ON Semiconductor
Quantity:
135
Part Number:
NTD3055-150-1G
Manufacturer:
ON
Quantity:
12 500
20
16
12
0.5
0.4
0.3
0.2
0.1
2.2
1.8
1.6
1.4
1.2
0.8
0.6
8
4
0
0
2
1
−50
0
0
V
V
GS
GS
V
−25
I
V
D
Figure 5. On−Resistance Variation with
DS
GS
1
= 9 V
= 8 V
Figure 1. On−Region Characteristics
V
= 4.5 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= 10 V
4
Figure 3. On−Resistance versus
T
= 10 V
J
0
, JUNCTION TEMPERATURE (°C)
2
I
Gate−To−Source Voltage
D
V
, DRAIN CURRENT (AMPS)
GS
25
8
= 10 V
3
T
T
Temperature
T
J
J
J
= −55°C
= 100°C
50
= 25°C
4
12
75
5
100
16
V
V
V
GS
GS
GS
6
= 7 V
= 6 V
= 5 V
125
20
7
http://onsemi.com
150
175
8
24
3
1000
100
0.5
0.4
0.3
0.2
0.1
20
16
12
10
8
4
0
0
1
3
0
0
Figure 4. On−Resistance versus Drain Current
T
V
T
J
GS
J
= 100°C
V
= 25°C
V
V
DS
= 0 V
GS
Figure 6. Drain−To−Source Leakage
GS
10
V
Figure 2. Transfer Characteristics
4
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
, GATE−TO−SOURCE VOLTAGE (VOLTS)
DS
= 15 V
≥ 10 V
I
D
Current versus Voltage
, DRAIN CURRENT (AMPS)
T
20
and Gate Voltage
5
8
J
= −55°C
T
T
T
J
J
J
= 100°C
= −55°C
= 25°C
T
T
T
J
J
J
12
30
6
= 150°C
= 125°C
= 100°C
40
16
7
50
20
8
24
60
9

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