NTD4815N-1G ON Semiconductor, NTD4815N-1G Datasheet - Page 4

• Manufacturer Part Number: NTD4815N-1G
• Description: MOSFET N-CH 30V 6.9A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4815N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 770pF @ 12V
• Power - Max: 1.26W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.030
0.025
0.020
0.015
0.010
0.005
60
50
40
30
20
10
2.0
1.5
1.0
0.5
0
−50
0
0
2
I
V
Figure 3. On−Resistance vs. Gate−to−Source
D
GS
−25
V
= 30 A
3
DS
V
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
= 10 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
4
J
0
, JUNCTION TEMPERATURE (°C)
5.5 V to 10 V
5
25
5 V
2
Temperature
6
50
Voltage
7
75
3
8
TYPICAL PERFORMANCE CURVES
100
9
125
4
10
T
I
T
D
J
J
= 25°C
= 30 A
= 25°C
http://onsemi.com
150
3.8 V
4.5 V
3.6 V
3.4 V
3.2 V
11
4 V
3 V
175
5
12
4
100,000
10,000
0.030
0.025
0.020
0.015
0.010
0.005
1000
100
10
80
70
60
50
40
30
20
10
0
0
4
5
0
Figure 4. On−Resistance vs. Drain Current and
V
T
V
Figure 6. Drain−to−Source Leakage Current
GS
J
DS
V
1
T
= 25°C
V
DS
J
= 0 V
≥ 10 V
GS
8
= 25°C
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
J
2
= 125°C
I
D
12
, DRAIN CURRENT (AMPS)
3
vs. Drain Voltage
Gate Voltage
T
15
4
V
J
V
T
T
16
GS
= −55°C
GS
J
J
= 175°C
= 125°C
= 11.5 V
= 4.5 V
5
20
20
6
24
7
25
8
28
9
10
30
32