NTD50N03RT4G ON Semiconductor, NTD50N03RT4G Datasheet

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NTD50N03RT4G

Manufacturer Part Number
NTD50N03RT4G
Description
MOSFET N-CH 25V 7.8A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD50N03RT4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 30A, 11.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 11.5V
Input Capacitance (ciss) @ Vds
750pF @ 12V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.019 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
45 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD50N03RT4G
Manufacturer:
ON
Quantity:
32 500
Part Number:
NTD50N03RT4G
Manufacturer:
ON Semiconductor
Quantity:
135
Company:
Part Number:
NTD50N03RT4G
Quantity:
5 000
NTD50N03R
Power MOSFET
25 V, 45 A, Single N−Channel, DPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
Continuous Drain
Current (R
(Note 2)
Power Dissipation
(R
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
Pulsed Drain Current
Current Limited by
Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain−to−Source (dv/dt)
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
L
Drain−to−Source Voltage
Gate−to−Source Voltage
Planar Technology
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Pb−Free Packages are Available
VCORE DC−DC Buck Converter Applications
Optimized for High Side Switching
qJA
qJA
qJC
= 6.32 A
) (Note 1)
) (Note 2)
) (Note 1)
DS(on)
J
qJA
qJA
qJC
pk
= 25°C, V
, L = 1.0 mH, R
)
)
)
to Minimize Conduction Losses
Parameter
DD
(T
= 50 V, V
Steady
State
J
= 25°C unless otherwise noted)
G
T
T
t
= 25 W)
p
A
A
= 10 ms
= 25°C,
= 25°C
GS
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
= 10 V,
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
I
Symbol
DmaxPkg
T
V
dv/dt
V
J
E
I
P
P
P
, T
DSS
DM
T
I
I
I
I
GS
AS
D
D
D
S
D
D
D
L
stg
−55 to
Value
"20
180
175
260
9.2
7.2
2.1
7.8
6.0
1.5
8.0
25
45
35
50
45
45
20
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
(Surface Mount)
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1 2
CASE 369AA
V
Gate
(BR)DSS
STYLE 2
25 V
DPAK
1
3
Y
WW
T50N03R
G
ORDERING INFORMATION
Drain
Drain
4
MARKING DIAGRAMS
4
2
& PIN ASSIGNMENTS
http://onsemi.com
G
12.5 mW @ 10 V
19 mW @ 4.5 V
3
Source
(Straight Lead)
R
CASE 369D
DS(on)
N−Channel
= Year
= Work Week
= Device Code
= Pb−Free Package
STYLE 2
1
DPAK
2
Publication Order Number:
D
3
TYP
Gate
S
4
1
Drain
NTD50N03R/D
(Straight Lead)
Drain
CASE 369AC
4
2
I
3 IPAK
D
1
45 A
MAX
2 3
3
Source
4

Related parts for NTD50N03RT4G

NTD50N03RT4G Summary of contents

Page 1

NTD50N03R Power MOSFET Single N−Channel, DPAK Features • Planar Technology • Low R to Minimize Conduction Losses DS(on) • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 3) Junction−to−Ambient − Steady State (Note 4) ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time ...

Page 4

2 2 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.065 0.055 ...

Page 5

iss 800 C rss 600 400 200 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 V = ...

Page 6

... ORDERING INFORMATION Order Number NTD50N03R NTD50N03RG NTD50N03RT4 NTD50N03RT4G NTD50N03R−1 NTD50N03R−1G NTD50N03R−35 NTD50N03R−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD50N03R ...

Page 7

... 0.13 (0.005 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/ −T− SEATING K PLANE 0.13 (0.005 NTD50N03R PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− ...

Page 8

... 0.13 (0.005 American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. ...

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