NTJS3151PT2G ON Semiconductor, NTJS3151PT2G Datasheet - Page 4

• Manufacturer Part Number: NTJS3151PT2G
• Description: MOSFET P-CH 12V 2.7A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS3151PT2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 400mV @ 100µA
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 12V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10000
1600
1400
1200
1000
1000
800
600
400
200
100
0
0
1
Figure 9. Resistive Switching Time Variation
t
t
d(off)
d(on)
t
t
r
f
2
Figure 7. Capacitance Variation
R
G
, GATE RESISTANCE (OHMS)
C
vs. Gate Resistance
4
TYPICAL PERFORMANCE CURVES
rss
10
6
8
V
I
V
D
DD
GS
= −1.0 A
T
V
10
= −6.0 V
= −4.5 V
J
GS
= 25°C
http://onsemi.com
= 0 V
C
C
oss
iss
100
12
4
4.5
3.5
2.5
1.5
0.5
(T
4
3
2
1
0
4
3
2
1
0
J
0
0
= 25°C unless otherwise noted)
Q1
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate−to−Source Voltage vs. Total
GS
J
−V
0.1
= 25°C
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
2
0.2
Q2
Q
g
, TOTAL GATE CHARGE (nC)
0.3
Gate Charge
4
QT
0.4
0.5
6
0.6
0.7
I
T
D
J
8
= −3.3 A
= 25°C
0.8 0.9
10