NTJS3157NT4G ON Semiconductor, NTJS3157NT4G Datasheet - Page 2

• Manufacturer Part Number: NTJS3157NT4G
• Description: MOSFET N-CH 20V 3.2A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS3157NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 400mV @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 500pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Coefficient
Parameter
(T
V
J
V
V
(BR)DSS
Symbol
= 25°C unless otherwise stated)
V
GS(TH)
Q
R
(BR)DSS
C
C
GS(TH)
t
t
I
C
G(TOT)
Q
I
DS(on)
Q
Q
V
g
d(on)
d(off)
DSS
GSS
t
OSS
RSS
T
T
RR
FS
ISS
t
t
GS
GD
SD
RR
r
f
a
b
/T
/T
J
J
V
http://onsemi.com
GS
V
V
V
V
V
V
V
V
I
V
V
V
V
V
GS
V
GS
I
S
GS
DS
DS
GS
GS
GS
D
= 0 V, dI
GS
GS
GS
GS
GS
GS
= 1.6 A
= 0.5 A, R
= 4.5 V, V
Test Condition
= 16 V
= 4.5 V, V
= 0 V,
= 0 V, V
= 0 V, f = 1.0 MHz,
=0 V,
= V
= 0 V, I
= 0 V, I
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 10 V, I
V
I
I
2
DS
D
S
DS
= 1.6 A
= 3.2 A
S
, I
= 10 V
/dt = 100 A/ms,
D
D
GS
D
G
D
DS
DD
= 250 mA
= 250 mA
D
D
D
= 250 mA
= ±8.0 V
= 6.0 W
= 3.2 A
= 4.0 A
= 3.6 A
= 2.0 A
T
T
T
= 10 V,
= 10 V,
J
J
J
= 25°C
= 85°C
= 25°C
0.40
Min
20
−4.0
Typ
500
9.0
6.9
1.0
1.8
6.0
0.7
3.0
5.0
12
45
55
70
75
60
12
21
11
15
12
±100
Max
1.0
5.0
1.0
60
70
85
15
15
25
45
25
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
V
V
S
V