NTJS4405NT4G ON Semiconductor, NTJS4405NT4G Datasheet - Page 3

• Manufacturer Part Number: NTJS4405NT4G
• Description: MOSFET N-CH 25V 1A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS4405NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 630mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
0.8
0.6
0.4
0.2
4.5
3.5
2.5
1.5
0.5
0
5
4
3
2
1
0
0
0
1.8
1.6
1.4
1.2
0.8
0.6
Figure 3. On−Resistance vs. Drain Current and
−50
1
V
5.5 V
4.5 V
7 V
6 V
GS
0.5
V
I
V
= 4.5 V
DS
D
Figure 1. On−Region Characteristics
GS
= 0.6 A
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.0
Figure 5. On−Resistance Variation with
= 4.5 V
1
I
D,
T
J
1.5
DRAIN CURRENT (AMPS)
, JUNCTION TEMPERATURE (°C)
0
Temperature
TYPICAL PERFORMANCE CURVES
2.0
2
25
T
T
T
J
J
J
Temperature
3.5 V
= 125°C
= 25°C
= −55°C
4 V
2.5
50
3.0
3
75
3.5
4.0
T
V
100
J
4
GS
V
V
= 25°C
GS
GS
= 2.5 V
4.5
= 3 V
= 2 V
http://onsemi.com
125
5.0
5
150
3
10000
1000
100
1.5
0.5
0.4
0.3
0.2
0.1
10
(T
2
1
0
1
0.2
0
0
J
Figure 4. On−Resistance vs. Drain Current and
V
= 25°C unless otherwise noted)
V
T
DS
GS
J
Figure 6. Drain−to−Source Leakage Current
0.4
V
= 25°C
≥ 5 V
V
= 0 V
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.5
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
0.6
I
D,
DRAIN CURRENT (AMPS)
0.8
25°C
Gate Voltage
10
1
T
T
V
V
vs. Voltage
J
J
GS
GS
1
= 150°C
= 125°C
= 2.7 V
= 4.5 V
1.2
T
J
1.5
15
= −55°C
1.4
1.6
T
20
2
J
= 125°C
1.8
2.5
25
2