NTD4854N-1G ON Semiconductor, NTD4854N-1G Datasheet

MOSFET N-CH 25V 15.7A IPAK

NTD4854N-1G

Manufacturer Part Number
NTD4854N-1G
Description
MOSFET N-CH 25V 15.7A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD4854N-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.6 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
15.7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
49.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
4600pf @ 12V
Power - Max
1.43W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4854N-1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTD4854N
Power MOSFET
25 V, 128 A, Single N- -Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
June, 2010 - - Rev. 2
MAXIMUM RATINGS
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Trench Technology
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb- -Free Devices
VCORE Applications
DC- -DC Converters
High/Low Side Switching
θJA
θJA
θJC
= 26 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
θJA
θJA
θJC
J
, L = 1.0 mH, R
= 25°C, V
to Minimize Conduction Losses
Parameter
DD
t
Steady
p
State
=10ms
= 50 V, V
(T
G
J
= 25 Ω)
= 25°C unless otherwise stated)
GS
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 10 V,
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
I
Symbol
DmaxPkg
V
T
dV/dt
EAS
V
I
P
P
P
T
STG
T
DSS
DM
I
I
I
I
GS
D
D
D
S
J
D
D
D
L
,
Value
--55 to
93.75
+175
20.8
16.1
15.7
12.2
1.43
±20
128
255
338
260
2.5
25
99
45
78
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
CASE 369AA
1
1 2
(Bent Lead)
V
STYLE 2
Drain
Drain 3
(BR)DSS
25 V
DPAK
4
2
3
Source
ORDERING INFORMATION
G
Y
WW
4854N = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
N- -CHANNEL MOSFET
http://onsemi.com
Gate
4.7 mΩ @ 4.5 V
3.6 mΩ @ 10 V
(Straight Lead)
R
CASE 369AC
1
= Year
= Work Week
= Pb--Free Package
DS(ON)
Drain
Drain
3 IPAK
1
4
D
2
2 3
Publication Order Number:
3
4
MAX
Source
S
Gate
(Straight Lead
CASE 369D
1
1
NTD4854N/D
Drain
DPAK)
Drain
2
I
IPAK
D
128 A
4
3
2
MAX
3
Source
4

Related parts for NTD4854N-1G

NTD4854N-1G Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4854N = Device Code G = Pb--Free Package ORDERING INFORMATION Publication Order Number: NTD4854N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient – Steady State (Note 1) Junction--to--Ambient – Steady State (Note 2) 1. Surface--mounted on FR4 board using 1 sq--in pad Cu. 2. Surface--mounted on FR4 board using the ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter DRAIN- -SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance 3. Pulse Test: pulse width ...

Page 4

T = 25° 3 140 120 100 DRAIN--TO--SOURCE VOLTAGE (VOLTS) DS Figure 1. On- -Region Characteristics 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 ...

Page 5

C iss 5000 4500 4000 3500 3000 2500 C oss 2000 1500 1000 500 C rss 0 0 2.5 5 7.5 10 12.5 DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 ...

Page 6

... SINGLE PULSE 0.01 1.0E--05 1.0E--04 ORDERING INFORMATION Device NTD4854NT4G NTD4854N--1G NTD4854N--35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES P (pk DUTY CYCLE ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED 90 CW ° SOLDERING FOOTPRINT* 6 ...

Page 8

... R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 ------ 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4854N/D ...

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