NTD4856N-1G ON Semiconductor, NTD4856N-1G Datasheet - Page 4

• Manufacturer Part Number: NTD4856N-1G
• Description: MOSFET N-CH 25V 13.3A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4856N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2241pF @ 12V
• Power - Max: 1.33W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 mOhms
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16.8 A
• Power Dissipation: 2.14 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.04
0.03
0.02
0.01
90
80
70
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
0
--50
2
10 V
I
V
Figure 3. On- -Resistance vs. Gate- -to- -Source
D
GS
V
= 30 A
--25
DS
V
Figure 1. On- -Region Characteristics
Figure 5. On- -Resistance Variation with
= 10 V
GS
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
1
T
J
4
0
, JUNCTION TEMPERATURE (°C)
3.8 V
4 V
25
4.2 V
2
Temperature
50
Voltage
6
75
3
TYPICAL PERFORMANCE CURVES
100
8
125
T
J
4
I
T
= 25°C
D
J
= 30 A
= 25°C
http://onsemi.com
150
3.6 V
3.4 V
3.2 V
2.8 V
2.6 V
10
5
175
4
0.0075
0.0065
0.0055
0.0045
0.0035
0.0025
10000
0.008
0.007
0.006
0.005
0.004
0.003
0.002
1000
100
130
120
100
110
90
80
70
60
50
40
30
20
10
0
20
5
0
Figure 4. On- -Resistance vs. Drain Current and
T
V
Figure 6. Drain- -to- -Source Leakage Current
V
J
DS
GS
V
= 25°C
V
30
DS
≥ 10 V
GS
= 0 V
Figure 2. Transfer Characteristics
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
1
10
I
40
D
T
, DRAIN CURRENT (AMPS)
J
= 25°C
T
vs. Drain Voltage
J
50
Gate Voltage
= 125°C
2
T
T
V
V
J
J
GS
GS
= 125°C
= 150°C
15
60
= 11.5 V
= 4.5 V
T
J
3
70
= --55°C
20
80
4
90
100
25
5