NTD5407NG ON Semiconductor, NTD5407NG Datasheet - Page 5

• Manufacturer Part Number: NTD5407NG
• Description: MOSFET N-CH 40V 38A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD5407NG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 32V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.026 Ohms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
0.00001
1
D = 0.5
SINGLE PULSE
0.05
0.02
0.2
0.1
0.0001
0.01
TYPICAL PERFORMANCE CURVES
Figure 12. Thermal Response
http://onsemi.com
0.001
P
t, TIME (s)
5
(pk)
DUTY CYCLE, D = t
t
1
t
2
0.01
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
− T
C
= P
0.1
(pk)
1
R
qJC
(t)
1