MTP20N15E
Power MOSFET
20 Amps, 150 Volts
N−Channel TO−220
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power converters
and PWM motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against unexpected
voltage transients.
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 1
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain − Continuous
Total Power Dissipation
Operating and Storage Temperature Range
Single Drain−to−Source Avalanche Energy
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Discrete Fast Recovery Diode
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Diode is Characterized for Use in Bridge Circuits
I
This is a Pb−Free Device*
DSS
Derate above 25°C
− Starting T
(V
I
Purposes, 1/8″ from case for 10 seconds
L
− Continuous
− Junction to Case
− Non−Repetitive (t
− Junction to Ambient
DD
= 20 Apk, L = 0.3 mH)
and V
− Continuous @ 100°C
− Single Pulse (t
= 120 Vdc, V
DS(on)
J
= 25°C
Rating
Specified at Elevated Temperature
GS
GS
p
p
(T
= 10 Vdc,
≤ 10 μs)
≤ 10 ms)
= 1.0 MΩ)
C
= 25°C unless otherwise noted)
Symbol
T
V
V
V
R
R
V
J
E
I
P
DGR
GSM
, T
T
DSS
DM
I
I
θJC
θJA
GS
D
D
AS
D
L
stg
−55 to
Value
± 20
± 32
62.5
150
150
112
150
260
0.9
1.1
20
12
60
60
1
Watts
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
mJ
°C
°C
MTP20N15EG
1
2
Device
3
MTP20N15E
A
Y
WW
G
ORDERING INFORMATION
4
R
G
DS(on)
CASE 221A
http://onsemi.com
20 AMPERES
TO−220AB
STYLE 5
150 VOLTS
N−Channel
TO−220AB
(Pb−Free)
Package
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D
= 130 mΩ
Publication Order Number:
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
S
1
20N15EG
AYWW
Drain
Drain
MTP
2
MTP20N15E/D
4
50 Units/Rail
Shipping
3
Source