ADG736BRM Analog Devices Inc, ADG736BRM Datasheet - Page 3

• Manufacturer Part Number: ADG736BRM
• Description: Analog Switch Dual SPDT 10-Pin MSOP
• Manufacturer: Analog Devices Inc
• Type: Analog Switchr

Specifications of ADG736BRM

• Package: 10MSOP
• Maximum On Resistance: 12@3V Ohm
• Maximum High Level Output Current: 30 mA
• Maximum Turn-off Time: 6(Typ)@3V ns
• Maximum Turn-on Time: 14(Typ)@3V ns
• Switch Architecture: SPDT
• Power Supply Type: Single
• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 4 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Current - Supply: 0.001µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

SPECIFICATIONS
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
Guaranteed by design; not subject to production test.
DD
Analog Signal Range
On Resistance (R
On Resistance Match Between Channels (∆R
On Resistance Flatness (R
Source Off Leakage I
Channel On Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
t
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth (–3 dB)
C
C
I
DD
ON
OFF
S
D
= 5 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.
, C
(Off )
S
(On)
INL
ON
or I
)
S
INL
INH
INH
(Off )
D
, I
S
FLAT (ON)
(On)
1
)
D
ON
)
25°C
2.5
4
0.1
0.5
±0.01
±0.01
0.005
12
5
7
–62
–82
–62
–82
200
9
32
0.001
Rev. C | Page 3 of 12
−40°C to
+85°C
4.5
0.4
1.2
2.4
0.8
± 0.1
16
8
1
1.0
B Version
−40°C to
+125°C
0 V to V
7
0.4
1.5
1
5
2.4
0.8
± 0.1
16
8
1
1.0
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
μA typ
μA max
Test Conditions/Comments
V
see Figure
V
V
V
V
see Figure
V
V
R
V
R
V
R
V
R
R
see Figure
R
R
see Figure 16
R
V
Digital inputs = 0 V or 5 V
S
S
S
DD
S
S
IN
L
S
L
S
L
S1
L
L
L
L
L
DD
= 50 Ω, C
= 50 Ω, C
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V/1 V, V
= V
= 300 Ω, C
= 3 V; see Figure
= 300 Ω, C
= 3 V; see Figure
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= 5.5 V
= 5.5 V
D
INL
S2
= 1 V or 4.5 V; see Figure
= 3 V; see Figure
or V
15
10
11
L
L
L
L
L
DD
DD
DD
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
INH
L
L
L
= 5 pF, f = 10 MHz
= 5 pF, f = 10 MHz
= 5 pF; see Figure
, I
, I
, I
= 35 pF
= 35 pF
= 35 pF
D
DS
DS
DS
= 1 V/4.5 V;
= −10 mA;
= −10 mA
= −10 mA
13
13
ADG736
14
17
12