2N6028RLRP ON Semiconductor, 2N6028RLRP Datasheet

THYRISTOR PROG UNIJUNCT 40V TO92

2N6028RLRP

Manufacturer Part Number
2N6028RLRP
Description
THYRISTOR PROG UNIJUNCT 40V TO92
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N6028RLRP

Voltage
40V
Power Dissipation (max)
300mW
Voltage - Output
11V
Voltage - Offset (vt)
600mV
Current - Gate To Anode Leakage (igao)
10nA
Current - Valley (iv)
25µA
Current - Peak
150nA
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
2N6027, 2N6028
Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
characteristics such as R
two resistor values. Application includes thyristor−trigger, oscillator,
pulse and timing circuits. These devices may also be used in special
thyristor applications due to the availability of an anode gate. Supplied
in an inexpensive TO−92 plastic package for high−volume
requirements, this package is readily adaptable for use in automatic
insertion equipment.
Features
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev.6
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Designed to enable the engineer to “program’’ unijunction
Programmable − R
Low On−State Voltage − 1.5 V Maximum @ I
Low Gate to Anode Leakage Current − 10 nA Maximum
High Peak Output Voltage − 11 V Typical
Low Offset Voltage − 0.35 V Typical (R
Pb−Free Packages are Available*
BB
, h, I
BB
Preferred Device
V
, h, I
and I
P
V
, and I
G
= 10 kW)
P
by merely selecting
F
= 50 mA
1
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
1
2
3
2N602x = Device Code
A
Y
WW
G
ORDERING INFORMATION
1
40 VOLTS, 300 mW
2
A
3
MARKING DIAGRAM
http://onsemi.com
PIN ASSIGNMENT
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AYWW G
PUTs
x = 7 or 8
602x
2N
G
Publication Order Number:
TO−92 (TO−226AA)
Cathode
Anode
Gate
CASE 029
STYLE 16
K
2N6027/D

Related parts for 2N6028RLRP

2N6028RLRP Summary of contents

Page 1

... Low Offset Voltage − 0.35 V Typical (R • Pb−Free Packages are Available* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev.6 ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Power Dissipation* Derate Above 25°C DC Forward Anode Current* Derate Above 25°C DC Gate Current* Repetitive Peak Forward Current m 100 s Pulse Width, 1% Duty Cycle Pulse ...

Page 3

ELECTRICAL CHARACTERISTICS (T Characteristic Peak Current Vdc MW Vdc kW Offset Voltage Vdc MW ...

Page 4

TYPICAL VALLEY CURRENT BEHAVIOR 1000 R G 100 SUPPLY VOLTAGE (V) S Figure 4. Effect of Supply Voltage 25°C 5.0 A 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 ...

Page 5

... Tape and Reel Packaging Specifications Brochure, BRD8011/D. *The “G’’ suffix indicates Pb−Free package available. 2N6027, 2N6028 TYPICAL PEAK CURRENT BEHAVIOR ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

Related keywords