BAP70-03,115 NXP Semiconductors, BAP70-03,115 Datasheet - Page 3

• Manufacturer Part Number: BAP70-03,115
• Description: DIODE PIN 50V 100MA SOD-323
• Manufacturer: NXP Semiconductors

Specifications of BAP70-03,115

• Package / Case: SC-76, SOD-323, UMD2
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.25pF @ 20V, 1MHz
• Resistance @ If, F: 1.9 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Carrier Life: 1.25 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.25 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.9 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 100 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1941-2; 934056620115; BAP70-03 T/R

NXP Semiconductors
CHARACTERISTICS
T
THERMAL CHARACTERISTICS
V
I
C
r
L
R
j
R
D
L
SYMBOL
SYMBOL
S
F
= 25 C unless otherwise specified.
d
th(j-s)
Silicon PIN diode
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
Rev. 05 - 27 March 2007
I
V
V
V
V
V
I
I
I
I
when switched from I
I
measured at I
I
F
F
F
F
F
R
F
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz
= 1 mA; f = 100 MHz
= 10 mA; f = 100 MHz
= 100 mA; f = 100 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 50 V
= 0 V; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
= 20 V; f = 1 MHz
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to
0.9
570
400
270
200
77
40
5.4
1.4
1.25
1.5
TYP.
VALUE
120
Product specification
1.1
100
250
100
50
7
1.9
MAX.
BAP70-03
UNIT
3 of 7
K/W
V
nA
fF
fF
fF
fF
nH
s
UNIT