BAP65-02,115 NXP Semiconductors, BAP65-02,115 Datasheet - Page 4

• Manufacturer Part Number: BAP65-02,115
• Description: DIODE PIN 30V 100MA SOD-523
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Termination Style: Solder Tails
• Carrier Life: 0.17 us
• Forward Voltage Drop: 0.9 V
• Maximum Diode Capacitance: 0.9 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: I-IGIA
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1937-2; 934056546115; BAP65-02 T/R

NXP Semiconductors
GRAPHICAL DATA
handbook, halfpage
handbook, halfpage
Silicon PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
(3) I
Diode inserted in series with a 50
via the analyzer Tee network. T
Fig.4
s 21
(
dB
10
( )
0.1
0.2
0.3
0.4
0.5
r D
)
F
F
F
10
2
0
10
1
1
= 0.5 mA.
= 1 mA.
= 5 mA.
0
1
Forward resistance as a function of forward
current; typical values.
Insertion loss ( s
function of frequency; typical values.
j
= 25 C.
(1)
(4) I
(5) I
1000
1
(2)
F
F
= 10 mA.
= 100 mA.
(3)
amb
21
2
stripline circuit and biased
= 25 C.
(5)
(4)
) of the diode as a
2000
10
I F (mA)
f (MHz)
MLD501
MLD499
3000
10
Rev. 04 - 8 January 2008
2
handbook, halfpage
handbook, halfpage
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50
T
Fig.5
amb
s 21
1000
(
dB
(fF)
C d
800
600
400
200
10
20
30
40
= 25 C.
)
0
2
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation ( s
frequency; typical values.
j
= 25 C.
4
1000
21
2
8
) of the diode as a function of
12
2000
Product specification
f (MHz)
BAP65-02
16
V R (V)
stripline circuit.
MLD502
MLD500
3000
20
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