BAP51-03,115 NXP Semiconductors, BAP51-03,115 Datasheet - Page 3

• Manufacturer Part Number: BAP51-03,115
• Description: DIODE PIN GP 50V 50MA SOD-323
• Manufacturer: NXP Semiconductors

Specifications of BAP51-03,115

• Package / Case: SC-76, SOD-323, UMD2
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
• Resistance @ If, F: 2.5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 0.55 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.35 pF @ 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 2.5 Ohm @ 10 mA
• Maximum Series Resistance @ Minimum If: 9 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1922-2; 934055509115; BAP51-03 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2004 Feb 11
V
V
I
C
r

R
j
SYMBOL
R
SYMBOL
D
L
= 25 C unless otherwise specified.
F
R
General purpose PIN diode
d
th(j-s)
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
I
V
V
V
V
I
I
I
when switched from I
I
at I
F
R
F
F
F
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 10 A
= 6 mA; R
R
= 50 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
= 3 mA
3
CONDITIONS
L
= 100 ; measured
F
= 10 mA to

50








MIN.
0.95


0.4
0.3
0.2
5.5
3.6
1.5
550
TYP.
VALUE
120
Product specification
BAP51-03
1.1

100

0.55
0.35
9
6.5
2.5

MAX.
UNIT
K/W
V
V
nA
pF
pF
pF



ns
UNIT