BAP63-05W,115 NXP Semiconductors, BAP63-05W,115 Datasheet

DIODE PIN 50V 100MA SOT-323

BAP63-05W,115

Manufacturer Part Number
BAP63-05W,115
Description
DIODE PIN 50V 100MA SOT-323
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheet

Specifications of BAP63-05W,115

Package / Case
SC-70-3, SOT-323-3
Diode Type
PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.35pF @ 20V, 1MHz
Resistance @ If, F
1.5 Ohm @ 100mA, 100MHz
Power Dissipation (max)
240mW
Configuration
Dual Common Anode
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
UHF or SHF
Termination Style
SMD/SMT
Carrier Life
0.31 us
Forward Voltage Drop
0.95 V
Maximum Diode Capacitance
0.35 pF
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
1.5 Ohms
Maximum Series Resistance @ Minimum If
3.5 Ohms
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
240 mW
Forward Current
100mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SC-70
Mounting
Surface Mount
Typical Carrier Life Time
310ns
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Applications Frequency Range
UHF/SHF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1928-2
934056543115
BAP63-05W T/R
Product specification
Supersedes data of 2001 Apr 04
DATA SHEET
BAP63-05W
Silicon PIN diode
ok, halfpage
DISCRETE SEMICONDUCTORS
M3D102
2001 May 18

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BAP63-05W,115 Summary of contents

Page 1

... DATA SHEET ok, halfpage BAP63-05W Silicon PIN diode Product specification Supersedes data of 2001 Apr 04 DISCRETE SEMICONDUCTORS M3D102 2001 May 18 ...

Page 2

... T junction temperature j 2001 May 18 PINNING PIN handbook, halfpage 1 Top view Marking code: W9-. Fig.1 Simplified outline (SOT323) and symbol. CONDITIONS  90  Product specification BAP63-05W DESCRIPTION anode (a1) anode (a2) common cathode MAM382 MIN. MAX. UNIT   100 mA  240 mW  ...

Page 3

... MHz 100 mA 1800 MHz 100 mA 2450 MHz F when switched from 100  mA measured 100 mA 100 MHz F PARAMETER 3 Product specification BAP63-05W TYP. MAX. 0.95 1.1  10  0.4  0.35 0.3 0.35 2.5 3.5 1.95 3 1.17 1.8 0.9 1.5  14.5  ...

Page 4

... I F (mA MHz; T Fig.3 MGW134 handbook, halfpage | s 21 (dB (GHz) Diode zero biased and inserted in series with a 50  stripline circuit. T amb Fig.5 4 Product specification BAP63-05W 500 400 300 200 100 C. j Diode capacitance as a function of reverse voltage; typical values −10 −20 −30 − ...

Page 5

... OUTLINE VERSION IEC SOT323 2001 May scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC- detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION Product specification BAP63-05W SOT323 ISSUE DATE 04-11-04 06-03-16 ...

Page 6

... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 6 Product specification BAP63-05W DEFINITION ...

Page 7

... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 7 Product specification BAP63-05W ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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