1N5711 STMicroelectronics, 1N5711 Datasheet
1N5711
Manufacturer Part Number
1N5711
Description
DIODE SCHOTTKY 70V 15MA D0-35
Manufacturer
STMicroelectronics
Specifications of 1N5711
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
70V
Current - Max
15mA
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Power Dissipation (max)
430mW
Package / Case
DO-204AH, DO-35, Axial
Product
Schottky Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.015 A
Configuration
Single
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.2 uA @ 50 V
Maximum Power Dissipation
430 mW
Operating Temperature Range
- 65 C to + 200 C
Mounting Style
Through Hole
Capacitance, Junction
2 pF
Current, Forward
15 mA
Current, Reverse
0.2 μA
Package Type
DO-35
Power Dissipation
430 mW
Primary Type
Schottky Barrier
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+200 °C
Temperature, Operating
-65 to +200 °C
Voltage, Forward
1 V
Voltage, Reverse
70 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2499-2
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N5711
Manufacturer:
Agilent/AVAGO
Quantity:
10 000
Part Number:
1N5711
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
1N5711-1JANTX
Manufacturer:
ZCOMM
Quantity:
1 400
Company:
Part Number:
1N5711-1JANTXV
Manufacturer:
Microsemi
Quantity:
1 400
Company:
Part Number:
1N5711UR-1JANTX
Manufacturer:
Microsemi
Quantity:
1 400
Part Number:
1N5711W-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
1N5711WS-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
October 2001 - Ed: 1B
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detec-
tion and pulse application with broad dynamic
range. Matched batches are available on request
ABSOLUTE RATINGS (limiting values)
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
* On infinite heatsink with 4mm lead length
** Pulse test: t
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
Symbol
Symbol
Symbol
V
R
V
I
T
P
V
R
RRM
T
th(j-a)
I
T
F
C
stg
F
tot
BR
L
* *
j
* *
®
p
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Power Dissipation*
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
Junction-ambient*
T
T
T
T
T
T
300 s
amb
amb
amb
amb
amb
amb
= 25°C
= 25 C
= 25 C
= 25 C
= 25°C
= 25 C
2%.
I
I
I
V
V
I
R
F
F
F
Test Conditions
Test Conditions
Test Conditions
R
R
= 1mA
= 15mA
= 5mA
= 10 A
= 50V
= 0V
Parameter
SMALL SIGNAL SCHOTTKY DIODE
f = 1MHz
Krakauer Method
T
T
a
a
= 25°C
= 25 C
Min.
Min.
70
DO-35
- 65 to 200
- 65 to 200
Value
Value
430
230
Typ.
Typ.
400
70
15
1N5711
Max.
Max.
0.41
100
0.2
1
2
°C/W
Unit
Unit
mW
Unit
Unit
mA
°C
pF
ps
V
C
V
V
A
1/3
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1N5711 Summary of contents
Page 1
... SMALL SIGNAL SCHOTTKY DIODE Parameter T = 25° Test Conditions Test Conditions 1mA 15mA 50V R Test Conditions 1MHz 5mA Krakauer Method F 1N5711 DO-35 Value Unit 430 mW ° 200 - 65 to 200 230 C Value Unit 400 °C/W Min. Typ. Max. Unit 0.2 A Min. ...
Page 2
... Fig. 1: Forward current versus forward voltage at low level (typical values). Fig. 3: Reverse current versus ambient tempera- ture. 2/3 Fig. 2: Capacitance C versus reverse applied voltage V (typical values). R Fig. 4: Reverse current versus continuous reverse voltage (typical values). ...
Page 3
... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF STMicroelectronics GROUP OF COMPANIES http://www.st.com DIMENSIONS Millimeters Inches Min. Max. Min. Max. 3.05 4.50 0.120 0.177 1.53 2.00 0.060 0.079 28.00 1.102 0.458 0.558 0.018 0.022 1N5711 3/3 ...