MMBD701LT1G ON Semiconductor, MMBD701LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBD701LT1G
• Description: DIODE SCHOTTKY 200MW 70V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBD701LT1G

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (max): 70V
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Power Dissipation (max): 200mW
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 70 V
• Configuration: Single
• Forward Voltage Drop: 1 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.2 uA @ 35 V
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Max: -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBD701LT1GOS; MMBD701LT1GOS; MMBD701LT1GOSTR

0.001
0.01
2.0
1.6
1.2
0.8
0.4
1.0
0.1
10
0
0
0
5.0
GENERATOR
SINUSOIDAL
T
T
T
10
A
10
A
A
Figure 1. Total Capacitance
= 100°C
Figure 3. Reverse Leakage
= 25°C
= 75°C
V
V
R
R
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
15
20
20
25
TYPICAL ELECTRICAL CHARACTERISTICS
I
F(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
30
30
35
NETWORK
BALLAST
(PADS)
f = 1.0 MHz
40
40
http://onsemi.com
45
I
R(PEAK)
CONDUCTION
CONDUCTION
CAPACITIVE
FORWARD
50
50
2
DUT
500
400
300
200
100
100
1.0
0.1
10
0
0
0
T
0.2
A
10
= 85°C
Figure 2. Minority Carrier Lifetime
PADS
0.4
KRAKAUER METHOD
20
Figure 4. Forward Voltage
V
F
I
F
, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)
30
T
T
A
40
0.8
A
= 25°C
= - 40°C
CONDUCTION
50
STORAGE
60
1.2
OSCILLOSCOPE
(50 W INPUT)
SAMPLING
70
80
1.6
90
100
2.0