MMBD701LT1G ON Semiconductor, MMBD701LT1G Datasheet - Page 8

• Manufacturer Part Number: MMBD701LT1G
• Description: DIODE SCHOTTKY 200MW 70V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBD701LT1G

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (max): 70V
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Power Dissipation (max): 200mW
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 70 V
• Configuration: Single
• Forward Voltage Drop: 1 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.2 uA @ 35 V
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Max: -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBD701LT1GOS; MMBD701LT1GOS; MMBD701LT1GOSTR

Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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