MMBD101LT1G ON Semiconductor, MMBD101LT1G Datasheet - Page 3
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MMBD101LT1G
Manufacturer Part Number
MMBD101LT1G
Description
DIODE SCHOTTKY 225MW 7V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBD101LT1G.pdf
(4 pages)
Specifications of MMBD101LT1G
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
7V
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Power Dissipation (max)
225mW
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Schottky Diodes
Peak Reverse Voltage
7 V
Configuration
Single
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA @ 3 V
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
7V
Forward Current If(av)
10mA
Forward Voltage Vf Max
600mV
Diode Case Style
SOT-23
No. Of Pins
3
Current Rating
10A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBD101LT1GOS
MMBD101LT1GOS
MMBD101LT1GOSTR
MMBD101LT1GOS
MMBD101LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBD101LT1G
Manufacturer:
ON Semiconductor
Quantity:
61 866
Company:
Part Number:
MMBD101LT1G
Manufacturer:
ON Semiconductor
Quantity:
146
Company:
Part Number:
MMBD101LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBD101LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
MMBZ5263BLT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMBZ33VALT1G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
SOD-123
MMSD103T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
1000 cyc
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/2
Results
0/960
0/240
0/240
0/240
0/240
0/6
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/6
0/80
0/2
0/30
0/240
0/6
0/90
0/240
0/6
0/89
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