BAR 63-03W E6327 Infineon Technologies, BAR 63-03W E6327 Datasheet - Page 3

• Manufacturer Part Number: BAR 63-03W E6327
• Description: DIODE RF SGL 50V 100MA SOD-323
• Manufacturer: Infineon Technologies

Specifications of BAR 63-03W E6327

• Package / Case: SOD-323
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 0.075 us
• Forward Voltage Drop: 1.2 V
• Maximum Diode Capacitance: 0.3 pF @ 5 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 1 Ohm (Typ) @ 10 mA
• Maximum Series Resistance @ Minimum If: 2 Ohm @ 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BAR 63-03W E6327; BAR63-03WE6327INTR; BAR6303WE6327XT; SP000010172

1
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
V
Reverse parallel resistance
V
V
V
Forward resistance
I
I
Charge carrier life time
I
R
I-region width
Insertion loss
I
I
I
Isolation
V
V
V
BAR63-02L in series configuration, Z = 50
F
F
F
F
F
F
R
R
R
R
R
R
R
R
L
= 5 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 1 mA, f = 1.8 GHz
= 5 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 100
= 5 V, f = 1 MHz
= 0 V, 100 MHz ... 1.8 GHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 0.9 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 2.45 GHz
1)
R
1)
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3 mA,
3
Symbol
C
R
r
W
I
I
L
SO
f
T
P
rr
I
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.21
0.15
0.11
17.9
12.3
500
typ.
1.2
4.5
0.3
0.1
15
75
10
5
1
max.
2007-04-19
0.3
BAR63...
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
k
ns
µm
dB