MMBD352LT1G ON Semiconductor, MMBD352LT1G Datasheet - Page 8

DIODE SWITCH DUAL 7V SOT23

MMBD352LT1G

Manufacturer Part Number
MMBD352LT1G
Description
DIODE SWITCH DUAL 7V SOT23
Manufacturer
ON Semiconductor
Datasheets

Specifications of MMBD352LT1G

Diode Type
Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (max)
7V
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Power Dissipation (max)
225mW
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
7 V
Forward Voltage Drop
0.6 V @ 0.01 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Capacitance, Junction
1 pF
Current, Forward
10 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Voltage, Forward
0.6 V
Voltage, Reverse
7 V
Rectifier Type
Switching Diode
Peak Rep Rev Volt
7V
Rev Curr
10uA
Forward Voltage
0.6V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBD352LT1GOS
MMBD352LT1GOS
MMBD352LT1GOSTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBD352LT1G
Manufacturer:
ON
Quantity:
1 673
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Manufacturer:
ON Semiconductor
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ON Semiconductor
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Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
Page 8 of 36

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