R76PD1220DQ00J Kemet, R76PD1220DQ00J Datasheet - Page 10

• Manufacturer Part Number: R76PD1220DQ00J
• Manufacturer: Kemet

Specifications of R76PD1220DQ00J

• Package/case: 10 X 3 X 8
• Mounting: Through Hole
• Capacitance Value: 0.0022 uF
• Voltage: 630|250 Vdc|Vac
• Dielectric: PP
• Lead Pitch For Radial: 7.5 mm
• Product Length: 10 mm
• Product Depth: 3 mm
• Tolerance: 5 %
• Operating Temperature: -55 to 105 °C

ElEctRical cHaRactERiSticS
Rated voltage (V
250Vdc - 0400Vdc - 630Vdc
630Vdc - 1000Vdc - 1600Vdc - 2000Vdc
Rated temperature (t
+85°C for V
+75°C for V
temperature derated voltage:
The following decreasing factor has to be applied on the
rated voltage:
+85°C to +105°C: 1.25% per °C for V
+75°C to +105°C: 1.35% per °C for V
capacitance range:
680pF to 15µF
100pF to 5.6µF
capacitance values:
E12 series (IEC 60063 Norm).
capacitance tolerances (measured at 1 kHz):
±5% (J); ±10% (K)
±2.5% (H); ±5% (J); ±10% (K);
total self-inductance (L):
(Lead length ~2 mm)
Dissipation factor (DF):
tgδx10
insulation resistance:
test voltage between terminations:
1.6xV
Pitch (mm)
test conditions
Temperature:
Voltage charge time:
Voltage charge:
performance
≥1x10
≥30000 s
* Typical value.
kHz
L (nH) ≈
100
r
10
-4
1
applied for 2 s at +25°C±5°C
at +25°C ±5°C
5
MΩ
r
r
C≤0.1
(d.c.)
(a.c.)
≤030
≤04
≤15
7.5
µ
R
8
for C≤0.33µF
for C>0.33µF
):
F
R
):
0.1µF<C≤1.0
10
9
1 section
2 sections
≤3
≤6
15
10
+25°C±5°C
1 min
100Vdc
µ
(5x10
(150000 s)*
F
22.5
r
r
18
(d.c.).
(a.c.)
5
MΩ)*
C>1
27.5
for 1 section
for 2 sections.
for C<1000pF
for C≥1000pF
18
≤4
µ
F
37.5
20
125
polypRopylENE capacitoR WitH DoUBlE
SiDED MEtalliZED FilM ElEctRoDES D.c. aND
PRODUCT CODE: R76
tESt MEtHoD aND pERFoRMaNcE
Damp heat, steady state:
Endurance:
Resistance to soldering heat:
long term stability (after two years):
pUlSE applicatioNS
test conditions
Temperature:
Relative humidity (RH):
Test duration:
performance
Capacitance change |∆C/C|: ≤2%
DF change (∆tgδ):
Insulation resistance:
test conditions
Temperature:
Test duration:
Voltage applied:
performance
Capacitance change |∆C/C|: ≤2%
DF change (∆tgδ): ≤10x10
Insulation resistance:
test conditions
Solder bath temperature:
Dipping time (with heat screen):10 s±1 s
performance
Capacitance change |∆C/C|: ≤1%
DF change (∆tgδ): ≤10x10
Insulation resistance:
Storage: standard environmental conditions (see page 12).
performance
Capacitance change |∆C/C|: ≤0.5%
≤10x10
≤10x10
-4
-4
-4
-4
at 110kHz for C≤1µF
at 110kHz for C≤1µF
at 111kHz for C>1µF
at 111kHz for C>1µF
+40°C±2°C
93% ±2%
56 days
≤10x10
≥50% of initial limit.
+85°C±2°C
2000 h
1.25xV
≥50% of initial limit.
+260°C±5°C
≥initial limit.
r
-4
(d.c.)
at 1kHz
MMKP Series
R76
09/2008