BAP51-05W,115 NXP Semiconductors, BAP51-05W,115 Datasheet - Page 4

DIODE PIN GP 50V 50MA SOT-323

BAP51-05W,115

Manufacturer Part Number
BAP51-05W,115
Description
DIODE PIN GP 50V 50MA SOT-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP51-05W,115

Package / Case
SC-70-3, SOT-323-3
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
50V
Current - Max
50mA
Capacitance @ Vr, F
0.35pF @ 5V, 1MHz
Resistance @ If, F
2.5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
240mW
Configuration
Dual Common Cathode
Reverse Voltage
50 V
Forward Continuous Current
50 mA
Frequency Range
VHF
Termination Style
SMD/SMT
Carrier Life
550 ns
Forward Voltage Drop
0.95 V
Maximum Diode Capacitance
0.55 pF
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
1.5 Ohms
Maximum Series Resistance @ Minimum If
5.5 Ohms
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
240 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1923-2
934055903115
BAP51-05W T/R
NXP Semiconductors
GRAPHICAL DATA
2001 Jan 23
handbook, halfpage
handbook, halfpage
General purpose PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
(3) I
Diode inserted in series with a 50  stripline circuit and biased via the
analyzer Tee network. T
Fig.4
|S 21 |
(dB)
−0.5
−2.5
−1.5
(Ω)
10
r D
10
−2
−1
F
F
F
10
2
−1
0
10
1
= 10 mA.
= 1 mA
= 0.5 mA
2
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (s
function of frequency; typical values.
j
= 25 C.
1
amb
1
(1)
1.5
= 25 C.
(2)
21
2
(3)
) of the diode as a
2
10
I F (mA)
2.5
f (GHz)
MGS659
MLD507
10
3
2
4
handbook, halfpage
handbook, halfpage
f = 100 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
s 21
amb
(dB)
(fF)
500
C d
400
300
200
100
−10
−20
−30
−40
−50
= 25 C.
2
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
frequency; typical values.
j
= 25 C.
4
1
21
1.5
2
8
) of the diode as a function of
12
2
BAP51-05W
Product specification
2.5
16
V R (V)
f (GHz)
MLD508
MLD509
20
3

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