BAP64-06,215 NXP Semiconductors, BAP64-06,215 Datasheet - Page 3

• Manufacturer Part Number: BAP64-06,215
• Description: DIODE PIN 175V 100MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAP64-06,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Anode
• Voltage - Peak Reverse (max): 175V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Common Anode
• Reverse Voltage: 175 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 1.55 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.35 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.35 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1935-2; 934055977215; BAP64-06 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Feb 27
Per diode
V
I
C
r

L
R
j
SYMBOL
R
SYMBOL
D
L
S
= 25 C; unless otherwise specified.
F
Silicon PIN diode
d
th j-s
forward voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
V
V
f = 1 MHz
f = 100 MHz; note 1
when switched from I
I
measured at I
F
R
R
R
= 50 mA
V
V
V
I
I
I
I
= 6 mA; R
F
F
F
F
= 175 V
= 20 V
3
R
R
R
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0
= 1 V
= 20 V
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to
0.95


0.52
0.37
0.23
20
10
2
0.7
1.55
1.4
TYP.
VALUE
220
Product specification
BAP64-06
1.1
10
1


0.35
40
20
3.8
1.35


MAX.
UNIT
K/W
V
A
A
pF
pF
pF




s
nH
UNIT