BAP1321-03,115 NXP Semiconductors, BAP1321-03,115 Datasheet

DIODE PIN 60V 100MA SOD-323

BAP1321-03,115

Manufacturer Part Number
BAP1321-03,115
Description
DIODE PIN 60V 100MA SOD-323
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheet

Specifications of BAP1321-03,115

Package / Case
SC-76, SOD-323, UMD2
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
60V
Current - Max
100mA
Capacitance @ Vr, F
0.32pF @ 20V, 1MHz
Resistance @ If, F
1.3 Ohm @ 100mA, 100MHz
Power Dissipation (max)
500mW
Configuration
Single
Reverse Voltage
60 V
Forward Continuous Current
100 mA
Frequency Range
UHF, SHF
Carrier Life
0.5 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.32 pF at 20 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
1.3 Ohms at 100 mA
Maximum Series Resistance @ Minimum If
5 Ohms at 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
500 mW
Forward Current
100mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SOD-323
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
UHF/SHF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1914-2
934056622115
BAP1321-03 T/R
Product specification
Supersedes data of 2001 May 11
DATA SHEET
BAP1321-03
Silicon PIN diode
DISCRETE SEMICONDUCTORS
2004 Feb 17

Related parts for BAP1321-03,115

BAP1321-03,115 Summary of contents

Page 1

... DATA SHEET BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 DISCRETE SEMICONDUCTORS 2004 Feb 17 ...

Page 2

... Feb 17 PINNING Marking code: V8. The marking bar indicates the cathode. Fig.1 PACKAGE DESCRIPTION plastic surface mounted package; 2 leads  90  Product specification BAP1321-03 PIN DESCRIPTION 1 cathode 2 anode 1 2 Simplified outline (SOD323; SC-76) and symbol. CONDITIONS MIN.   ...

Page 3

... 100 mA 900 MHz 100 mA 1800 MHz 100 mA 2450 MHz F when switched from 100 ; measured 100 mA 100 MHz F PARAMETER 3 Product specification BAP1321-03 TYP. MAX. UNIT 0.95 1.1 V  100 nA  0.4 pF 0.35 0.45 pF 0.25 0.32 pF  3.4 5.0  2.4 3.6  ...

Page 4

... Feb 17 MLD591 handbook, halfpage (mA Fig.3 MLD593 handbook, halfpage (GHz) Diode zero biased and inserted in series with a 50  stripline circuit. T amb Fig.5 4 BAP1321-03 500 C d (fF) 400 300 200 100  MHz. Diode capacitance as a function of reverse voltage; typical values − ...

Page 5

... Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD323 2004 Feb scale 1.8 1.35 2.7 0.45 0.25 0.2 1.6 1.15 2.3 0.15 0.15 REFERENCES JEDEC JEITA SC-76 5 Product specification BAP1321- detail EUROPEAN ISSUE DATE PROJECTION SOD323 Q c 03-12-17 06-03-16 ...

Page 6

... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 6 Product specification BAP1321-03 DEFINITION ...

Page 7

... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 7 Product specification BAP1321-03 ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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