BAP65-03,115 NXP Semiconductors, BAP65-03,115 Datasheet - Page 4

DIODE PIN 30V 100MA SOD-323

BAP65-03,115

Manufacturer Part Number
BAP65-03,115
Description
DIODE PIN 30V 100MA SOD-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP65-03,115

Package / Case
SC-76, SOD-323, UMD2
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
30V
Current - Max
100mA
Capacitance @ Vr, F
0.375pF @ 20V, 1MHz
Resistance @ If, F
350 mOhm @ 100mA, 100MHz
Power Dissipation (max)
500mW
Configuration
Single
Reverse Voltage
30 V
Forward Continuous Current
100 mA
Carrier Life
0.17 us
Forward Voltage Drop
1.1 V @ 50 mA
Maximum Diode Capacitance
0.8 pF @ 3 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
0.9 Ohm @ 10 mA
Maximum Series Resistance @ Minimum If
0.95 Ohm @ 5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1938-2
934056547115
BAP65-03 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAP65-03,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
GRAPHICAL DATA
2004 Feb 11
handbook, halfpage
handbook, halfpage
Silicon PIN diode
T
Fig.2
(1) I
(2) I
(3) I
Diode inserted in series with a 50  stripline circuit and biased
via the analyzer Tee network; T
Fig.4
s 21
j
(
= 25 C; f = 100 MHz.
dB
−0.1
−0.2
−0.3
−0.4
−0.5
10
(Ω)
r D
)
F
F
F
10
2
−1
0
10
1
= 0.5 mA.
= 1 mA.
= 5 mA.
0
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (s
function of frequency; typical values.
(1)
(4) I
(5) I
1000
1
(2)
F
F
= 10 mA.
= 100 mA.
(3)
amb
21
2
= 25 C.
) of the diode as a
(4)
(5)
2000
10
I F (mA)
f (MHz)
MLD505
MLD503
3000
10
2
4
handbook, halfpage
handbook, halfpage
T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
j
amb
s 21
= 25 C; f = 1 MHz.
1000
(
dB
(fF)
−10
−20
−30
−40
C d
800
600
400
200
= 25 C.
)
0
0
2
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
frequency; typical values.
4
1000
21
2
8
) of the diode as a function of
12
2000
Product specification
f (MHz)
BAP65-03
16
V R (V)
MLD506
MLD504
3000
20

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