BAP51-04W,115 NXP Semiconductors, BAP51-04W,115 Datasheet - Page 3

• Manufacturer Part Number: BAP51-04W,115
• Description: DIODE PIN GP 50V 50MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAP51-04W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
• Resistance @ If, F: 2.5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Series
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 0.55 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.35 pF @ 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 2.5 Ohm @ 10 mA
• Maximum Series Resistance @ Minimum If: 9 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 50mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 550ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056539115; BAP51-04W T/R; BAP51-04W T/R

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2002 Feb 19
Per diode
V
V
I
C
r
τ
L
R
j
SYMBOL
R
SYMBOL
D
L
S
= 25 °C unless otherwise specified.
F
R
d
th j-s
General purpose PIN diode
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
I
I
V
V
V
V
I
I
I
when switched from I
I
measured at I
I
F
R
F
F
F
R
F
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz
= 10 µA
= 6 mA; R
= 50 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
PARAMETER
L
R
CONDITIONS
= 100 Ω;
= 3 mA
3
F
= 10 mA to
−
50
−
−
−
−
−
−
−
−
−
MIN.
0.95
−
−
0.4
0.3
0.2
5.5
3.6
1.5
550
1.6
Preliminary specification
TYP.
VALUE
BAP51-04W
250
1.1
−
100
−
0.55
0.35
9
6.5
2.5
−
−
MAX.
UNIT
K/W
V
V
nA
pF
pF
pF
Ω
Ω
Ω
ns
nH
UNIT