MMBT2222A-7-F Diodes Zetex, MMBT2222A-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT2222A-7-F
• Description: Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: NPNr

Specifications of MMBT2222A-7-F

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|35@150mA@1V
• Maximum Operating Frequency: 300(Min) MHz
• Maximum Dc Collector Current: 0.6 A
• Maximum Base Emitter Saturation Voltage: 1.2@15mA@150mA|2@50mA@500mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@15mA@150mA|1@50mA@500mA V
• Maximum Collector Base Voltage: 75 V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 6 V
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 75V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 100
• Power Dissipation: 300mW
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
MMBT2222A
Document number: DS30041 Rev. 12 - 2
4. Short duration pulse test used to minimize self-heating effect.
400
350
300
250
200
150
100
50
0
Characteristic (Note 4)
0
Fig. 1 Power Dissipation vs. Ambient Temperature
25
T , AMBIENT TEMPERATURE (°C)
A
50
75
100 125
@T
A
= 25°C unless otherwise specified
Note 1
150
V
V
V
Symbol
V
V
175
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
C
I
C
h
CBO
CEX
EBO
NF
I
BL
f
t
t
obo
t
t
FE
ibo
T
d
s
r
f
200
www.diodes.com
2 of 4
Min
100
300
6.0
0.6
75
40
35
50
75
40
50
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
⎯
⎯
⎯
⎯
⎯
1,000
100
10
Max
300
225
0.3
1.0
1.2
2.0
4.0
1
10
10
10
20
25
10
25
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Typical DC Current Gain vs. Collector Current
8
0.1
T = -25°C
A
MHz
Unit
I , COLLECTOR CURRENT (mA)
C
nA
μA
nA
nA
nA
pF
pF
dB
⎯
ns
ns
ns
ns
V
V
V
V
V
T = 125°C
A
1
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
V
V
V
f = 100MHz
V
R
V
V
V
V
V
I
V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
B1
T = 25°C
CB
CB
CE
EB
CE
CB
EB
CE
CE
S
CC
BE(off)
CC
BE(OFF)
CC
CC
= 150mA, I
= 10μA, I
= 10mA, I
= 10μA, I
= 100μA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 10mA, V
= 150mA, V
= 500mA, I
= 150mA, I
= 500mA, I
A
= 1.0kΩ, f = 1.0kHz
= I
= 3.0V, I
= 60V, V
= 60V, V
= 0.5V, f = 1.0MHz, I
= 10V, I
= 60V, I
= 60V, I
= 10V, f = 1.0MHz, I
= 20V, I
= 30V, I
= 3.0V, I
= 30V, I
= 30V, I
B2
= - 0.5V, I
10
= 15mA
= 0.5V
E
C
B
C
E
E
C
C
C
C
C
EB(OFF)
EB(OFF)
CE
C
= 0
= 0
B
B
B
B
CE
Test Condition
= 0
= 0
= 0, T
= 100μA,
= 20mA,
CE
CE
CE
CE
CE
= 150mA,
= 150mA,
= 150mA, I
= 0
= 150mA, I
= 15mA
= 50mA
= 15mA
= 50mA
= 10V, T
= 10V
= 10V
= 10V
= 10V
= 10V
= 1.0V
B1
A
= 15mA
100
= 3.0V
= 3.0V
MMBT2222A
= 150°C
V
CE
A
E
C
B1
B1
= 1.0V
= -55°C
= 0
= 0
© Diodes Incorporated
September 2008
= I
= 15mA,
B2
1,000
= 15mA