DF10M-E3/45 Vishay, DF10M-E3/45 Datasheet
DF10M-E3/45
Specifications of DF10M-E3/45
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DF10M-E3/45 Summary of contents
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... V 50 100 200 RRM 140 RMS V 50 100 200 DC I F(AV) I FSM STG DF005M thru DF10M Vishay General Semiconductor DF04M DF06M DF08M DF10M DF04 DF06 DF08 DF10 400 600 800 1000 280 420 560 700 400 600 800 1000 1 150 www.vishay.com ...
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... DF005M thru DF10M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous forward 1.0 A voltage drop per diode Maximum reverse current °C A rated DC blocking T = 125 °C A voltage per diode Typical junction 4 MHz capacitance per diode THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" ...
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... DF005M thru DF10M Vishay General Semiconductor ° 1.0 MHz mVp-p sig 10 100 Reverse Voltage (V) 0.1 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...