HSMS-286B-TR1G Avago Technologies US Inc., HSMS-286B-TR1G Datasheet - Page 5
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HSMS-286B-TR1G
Manufacturer Part Number
HSMS-286B-TR1G
Description
DIODE SCHOTTKY DETECT HF SOT-323
Manufacturer
Avago Technologies US Inc.
Datasheet
1.HSMS-2860-BLKG.pdf
(18 pages)
Specifications of HSMS-286B-TR1G
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
4V
Capacitance @ Vr, F
0.25pF @ 0V, 1MHz
Package / Case
SC-70-3, SOT-323-3
Forward Voltage Vf Max
350mV
Diode Case Style
SOT-323
No. Of Pins
3
Termination Type
SMD
Junction Temperature, Tj Max
150°C
Operating Temperature Range
-65°C To +150°C
Pin Count
3
Filter Terminals
SMD
Rohs Compliant
Yes
Capacitance Ct
0.25pF
Forward Voltage
350mV
Breakdown Voltage
7V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Compliant
Typical Parameters, Single Diode
5
100
.01
0.3
10
30
10
.1
1
1
0.1 0.2 0.3 0.4
-50
R L = 100 KΩ
2.45 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
FORWARD VOLTAGE (V)
POWER IN (dBm)
0.5
-40
0.6
5.8 GHz
915 MHz
T A = –55°C
T A = +25°C
T A = +85°C
0. 7
0.8 0.9
-30
1.0
10,000
1000
100
100
10
10
1
1
–40
0.05
–30
0.10
FORWARD VOLTAGE (V)
I F (left scale)
POWER IN (dBm)
–20
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R L = 100 KΩ
0.15
V F (right scale)
–10
0.20
20 µA
5 µA
0
0.25
10
10
1
10 µA
10000
1000
100
0.1
40
35
30
25
20
15
10
10
5
1
-50
.1
R L = 100 KΩ
Input Power =
Data taken in fixed-tuned
R L = 100 KΩ
-40
FR4 circuit
–30 dBm @ 2.45 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
1
BIAS CURRENT (µA)
POWER IN (dBm)
-30
5.8 GHz
2.45 GHz
-2 0
10
-1 0
100
0