HSMP-481B-BLKG Avago Technologies US Inc., HSMP-481B-BLKG Datasheet - Page 3
![DIODE PIN ATTENUATOR HF SOT-323](/photos/22/12/221245/3791606_sml.jpg)
HSMP-481B-BLKG
Manufacturer Part Number
HSMP-481B-BLKG
Description
DIODE PIN ATTENUATOR HF SOT-323
Manufacturer
Avago Technologies US Inc.
Type
Attenuatorr
Datasheet
1.HSMP-3812-BLKG.pdf
(9 pages)
Specifications of HSMP-481B-BLKG
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
100V
Current - Max
1A
Capacitance @ Vr, F
0.4pF @ 50V, 1MHz
Resistance @ If, F
3 Ohm @ 100mA, 100MHz
Package / Case
SC-70-3, SOT-323-3
Diode Case Style
SOT-323
Series Resistance @ If
3ohm
Peak Reflow Compatible (260 C)
Yes
Capacitance Ct
0.4pF
Leaded Process Compatible
Yes
Breakdown Voltage
100V
Configuration
Single Dual CC
Operating Temperature Classification
Military
Reverse Voltage
100V
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Applications Frequency Range
UHF/SHF
Capacitance
0.35pF
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HSMP-481B-BLKG
Manufacturer:
AVAGO
Quantity:
40 000
Part Number:
HSMP-481B-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Typical Parameters at T
Notes:
3. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution.
3
Typical Parameters at T
Part Number
HSMP-
381x
Test Conditions
Figure 1. RF Capacitance vs. Reverse
Bias.
Figure 4. Forward Current vs. Forward
Voltage.
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.01
100
0.1
10
1
0
0
2
V
F
0.2
4
REVERSE VOLTAGE (V)
– FORWARD VOLTAGE (mA)
125 C 25 C –50 C
1 MHz
30 MHz
frequency>100 MHz
6
0.4
8
10 12
0.6
C
C
= 25°C
= 25°C (unless otherwise noted), Single Diode
0.8
Series Resistance
14
f = 100 MHz
I
16
F
1.0
= 1 mA
R
S
53
18 20
(Ω)
1.2
Typical Applications for Multiple Diode Products
INPUT
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.
10000
1000
Figure 2. RF Resistance vs. Forward
Bias Current, f = 100MHz
100
10
1
0.01
I
F
Carrier Lifetime
– FORWARD BIAS CURRENT (mA)
I
R
I
F
= 250 mA
= 50 mA
W (ns)
1500
0.1
1
T
T
T
A
A
A
= +85 C
= +25 C
= –55 C
VARIABLE BIAS
10
VOLTAGE
FIXED
BIAS
Reverse Recovery Time
100
90% Recovery
I
F
V
= 20 mA
R
T
rr
300
= 10 V
(ns)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
120
100
110
90
80
70
60
50
40
1000
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
DIODE RF RESISTANCE (OHMS)
100
Capacitance
0.27 @ 50 V
RF IN/OUT
f = 1 MHz
C
Total
T
(pF)
10