HSMS-2817-TR2G Avago Technologies US Inc., HSMS-2817-TR2G Datasheet - Page 3

• Manufacturer Part Number: HSMS-2817-TR2G
• Description: DIODE SCHOTTKY GP LN 20V SOT-143
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMS-2817-TR2G

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Diode Type: Schottky - 1 Bridge
• Voltage - Peak Reverse (max): 20V
• Current - Max: 1A
• Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
• Resistance @ If, F: 15 Ohm @ 5mA, 1MHz
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Configuration: Quad Ring
• Forward Voltage Drop: 410 mV
• Maximum Reverse Leakage Current: 0.2 uA at 15 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
The equivalent adjacent capacitance is the capacitance
between points A and C in the figure below. This capaci‑
tance is calculated using the following formula
This information does not apply to cross‑over quad di‑
odes.
3
C
C
C
C
DIAGONAL
DIAGONAL
ADJACENT
ADJACENT
R
R
j
j
=
=
= _______ + _______
= _______ + _______
= C
= C
C
C
C
C
8.33 X 10
8.33 X 10
1
1
1
1
1
1
x C
+ C
x C
+ C
+ ____________
+ ____________
I
I
b
b
+ I
+ I
2
2
2
2
–– + –– + ––
C
–– + –– + ––
C
1
1
s
s
2
2
-5
-5
C
C
C
C
nT
nT
1
1
C
C
3
3
1
3
3
1
x C
+ C
x C
+ C
3
3
1
C
1
C
4
4
4
4
4
4
Linear Equivalent Circuit Model Diode Chip
R
C
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
R
where
I
I
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-281x product,
please refer to Application Note AN1124.
b
s
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
=
= junction capacitance (see Table of SPICE parameters)
= series resistance (see Table of SPICE parameters)
Parameter
8.33 X 10
C
I
B
E
R
P
P
M
I
N
BV
S
J0
G
V
S
B
T
R
I
S
b
+ I
s
-5
nT
Units
pF
eV
Ω
V
A
A
V
R
C
j
j
HSMS-281x
4.8E‑9
0.69
1.08
0.65
1.1
E‑5
0.5
25
10
2