5082-3080#T25 Avago Technologies US Inc., 5082-3080#T25 Datasheet

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5082-3080#T25

Manufacturer Part Number
5082-3080#T25
Description
DIODE PIN RF SWITCH 100V AXIAL
Manufacturer
Avago Technologies US Inc.
Type
Attenuator/Switchr
Datasheet

Specifications of 5082-3080#T25

Package / Case
Axial
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
100V
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 50V, 1MHz
Resistance @ If, F
2.5 Ohm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
50 mA
Frequency Range
VHF, UHF
Termination Style
Axial
Carrier Life
1.3 us
Maximum Diode Capacitance
0.4 pF at 50 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
2.5 Ohms at 100 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Operating Temperature Classification
Military
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
VHF/UHF
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
5082-3080#T255082-3080
Manufacturer:
ROHM
Quantity:
400 000
Company:
Part Number:
5082-3080#T255082-3080
Manufacturer:
AVAGO/安华高
Quantity:
20 000
1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Maximum Ratings
Junction Operating and
Storage Temperature Range .........................-65°C to +150°C
Power Dissipation 25°C .................................................250 mW
Peak Inverse Voltage (PIV) ...................................... same as V
Maximum Soldering Temperature ............... 260°C for 5 sec
Description/Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex filters. The 5082-3188 is optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode is a function of the current
flowing in the diode. These current controlled resistors are
specified for use in control applications such as variable RF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned filters, analog phase shifters, and
RF limiters.
Outline 15 diodes are available on tape and reel. The tape
and reel specification is patterned after RS-296-D.
(Derate linearly to zero at 150°C)
BR
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
Outline 15
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
0.41 (.016)
0.36 (.014)
1.93 (.076)
1.73 (.068)
25.4 (1.00)
25.4 (1.00)
4.32 (.170)
3.81 (.150)
MIN.
MIN.

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5082-3080#T25 Summary of contents

Page 1

... These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are ...

Page 2

... Breakdown Part Lifetime Voltage τ Number (ns) V (V) BR 5082-3080 1300 (typ.) 100 1N5767* 1300 (typ.) 100 5082-3379 1300 (typ.) 50 5082-3081 2500 (typ.) 100 Test Conditions I = 250 mA Measure R I ≤ 10 µA R *The 1N5767 has the additional specifications: τ = 1.0 msec minimum 2 from the glass body. Typical package inductance and ca- pacitance are 2 ...

Page 3

... Typical Parameters 25°C (unless otherwise noted) A 100 5082-3001, 3039, 3077, 3080 IN5719 10 1 125°C 25°C –60°C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 V – FORWARD VOLTAGE (V) F Figure 1. Forward Current vs. Forward Voltage. 1.0 .5 5082-3039 IN5719 5082-3001 REVERSE VOLTAGE (V) Figure 4 ...

Page 4

... YWW YWW where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part num- ber the last digit of the calendar year the work week of manufac- ture. Examples of diodes manufactured during workweek 45 of 1999: 1N5712 5082-3080 would be marked: ...

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