NE5511279A-A CEL, NE5511279A-A Datasheet - Page 3

• Manufacturer Part Number: NE5511279A-A
• Description: MOSFET LD N-CHAN 7.5V 79A
• Manufacturer: CEL

Specifications of NE5511279A-A

• Transistor Type: LDMOS
• Frequency: 900MHz
• Gain: 15dB
• Voltage - Rated: 20V
• Current Rating: 3A
• Current - Test: 400mA
• Voltage - Test: 7.5V
• Power - Output: 40dBm
• Package / Case: 79A
• Forward Transconductance Gfs (max / Min): 0.0023 S
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document No. PU10322EJ01V0DS (1st edition)
Date Published June 2003 CP(K)
Printed in Japan
DESCRIPTION
transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and
housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added
efficiency at 900 MHz under the 7.5 V supply voltage.
FEATURES
• High output power
• High power added efficiency
• High linear gain
• Surface mount package
• Single supply
APPLICATIONS
• 460 MHz Radio Systems
• 900 MHz Radio Systems
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE5511279A-T1
NE5511279A-T1A
Remark To order evaluation samples, contact your nearby sales office.
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Package
79A
: P
: P
:
:
: G
: G
: 5.7
: V
add
add
out
out
DS
L
L
= 15.0 dB TYP. (f = 900 MHz, V
= 18.5 dB TYP. (f = 460 MHz, V
= 40.0 dBm TYP. (f = 900 MHz, V
= 40.5 dBm TYP. (f = 460 MHz, V
= 2.8 to 8.0 V
= 48% TYP. (f = 900 MHz, V
= 50% TYP. (f = 460 MHz, V
5.7
1.1 mm MAX.
DATA SHEET
Marking
W3
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
DS
DS
DS
DS
= 7.5 V, P
= 7.5 V, P
= 7.5 , P
= 7.5 V, P
DS
DS
SILICON POWER MOS FET
= 7.5 V, P
= 7.5 V, P
NE5511279A
in
in
in
= 27 dBm, I
= 25 dBm, I
in
= 5 dBm V, I
Supplying Form
= 5 dBm, I
in
in
= 27 dBm, I
= 25 dBm, I
NEC Compound Semiconductor Devices 2003
Dset
Dset
Dset
Dset
= 400 mA)
= 400 mA)
= 400 mA)
Dset
Dset
= 400 mA)
= 400 mA)
= 400 mA)