BLF6G20LS-140,112 NXP Semiconductors, BLF6G20LS-140,112 Datasheet - Page 38

IC BASESTATION FINAL SOT896B

BLF6G20LS-140,112

Manufacturer Part Number
BLF6G20LS-140,112
Description
IC BASESTATION FINAL SOT896B
Manufacturer
NXP Semiconductors

Specifications of BLF6G20LS-140,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
39A
Current - Test
1A
Voltage - Test
28V
Power - Output
35.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4419
934060897112
BLF6G20LS-140
BLF6G20LS-140
PCI Express PHYs and channel switches
PCI Express solutions

Product
PX1011A-EL1
PX1011A-EL1/G
PX1012A-EL1
PX1012A-EL1/G
Description
x1 PCI Express physical layer device, compliant with
PCI Express specification v1.0a and v1.1
x1 PCI Express physical layer device, compliant with
PCI Express Specification v1.0a and v1.1
x1 PCI Express physical layer device, compliant with
PCI Express Specification v1.0a and v1.1, for use with
PLDA PCI Express IP core
x1 PCI Express physical layer device, compliant with
PCI Express Specification v1.0a and v1.1, for use with
PLDA PCI Express IP core
Target applications
PC plug-in cards, embedded systems,
ExpressCards
PC plug-in cards, embedded systems,
ExpressCards
PC plug-in cards, embedded systems,
ExpressCards
PC plug-in cards, embedded systems,
ExpressCards
Package
LFBGA81, leaded
LFBGA81, lead-free
LFBGA81, leaded
LFBGA81, lead-free
Power
<300 mW
<300 mW
<300 mW
<300 mW
Availability
Sampling
Sampling
Sampling
Sampling

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