CGH40010F Cree Inc, CGH40010F Datasheet - Page 5

• Manufacturer Part Number: CGH40010F
• Description: TRANS 10W RF GAN HEMT 440166 PKG
• Manufacturer: Cree Inc

Specifications of CGH40010F

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 14.5dB @ 3.7GHz
• Voltage - Rated: 84V
• Current Rating: 3.5A
• Current - Test: 200mA
• Voltage - Test: 28V
• Power - Output: 12.5W
• Package / Case: 440166
• For Use With: CGH40010F-TB - BOARD DEMO AMP CIRCUIT CGH40010
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: CGH40010FE

Typical Performance
Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
5
CGH40010 Rev 3.1
Simulated Maximum Available Gain and K Factor of the CGH40010F
14
13
12
10
11
9
8
Swept CW Data of CGH40010F vs. Output Power with Source
23
and Load Impedances Optimized for P1 Power at 3.6 GHz
25
27
Swept CW Data of CGH40015F vs. Output Power with Source
and Load Impedances Optimized for P1 Power at 3.6 GHz
VDD = 28 V, IDQ = 200 mA, Freq = 3.6 GHz
29
V
V
DD
DD
= 28 V, I
= 28 V, I
31
Pout (dBm)
33
DQ
DQ
= 200 mA
= 200 mA
35
37
39
41
43
60
54
48
42
36
30
24
18
12
6
0
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www.cree.com/wireless
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Durham, NC 27703
4600 Silicon Drive
Cree, Inc.