CGH40090PP Cree Inc, CGH40090PP Datasheet - Page 2

• Manufacturer Part Number: CGH40090PP
• Description: TRANS 90W RF GAN HEMT 440199 PKG
• Manufacturer: Cree Inc

Specifications of CGH40090PP

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 12.5dB @ 2GHz
• Voltage - Rated: 84V
• Current Rating: 28A
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 100W
• Package / Case: 440199
• For Use With: CGH40090PP-TB - BOARD DEMO AMP CIRCUIT CGH40090
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: CGH40090PPE

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Note:
1
2
3
Electrical Characteristics (T
Notes:
1
2
3
4
5
6
7
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Screw Torque
Thermal Resistance, Junction to Case
Case Operating Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
RF Characteristics
Small Signal Gain
Power Output at Saturation
Drain Efficiency
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
2
Refer to the Application Note on soldering at
Measured for the CGH40090PP at P
See also, the Power Dissipation De-rating Curve on Page 6.
Measured on wafer prior to packaging.
Scaled from PCM data.
I
P
Drain Efficiency = P
Capacitance values are for each side of the device.
Measured in CGH40090PP-TB.
DQ
SAT
of 1.0 A is by biasing each device at 0.5 A.
is defined as: Q1 or Q2 = I
CGH40090PP Rev 3.2
6
3,4
1
1
(T
2
C
OUT
= 25
7
5
2,3
/ P
˚
C, F
DC
2
0
= 2.0 GHz unless otherwise noted)
G
Symbol
VSWR
V
V
= 14 mA.
P
V
G
C
C
C
GS(th)
GS(Q)
I
DS
SAT
η
GD
BR
SS
GS
DS
DISS
C
= 25˚C)
= 112W.
Symbol
Min.
23.2
-3.8
120
12
80
45
www.cree.com/products/wireless_appnotes.asp
–
–
–
–
–
I
V
T
R
V
GMAX
T
T
T
DSS
STG
τ
θJC
GS
S
C
J
Typ.
28.0
12.5
19.0
-3.3
-3.0
100
5.9
0.8
55
–
–
10 : 1
Max.
-2.3
–
–
–
–
–
–
–
–
–
-65, +150
-40, +150
-10, +2
Rating
1.45
225
245
84
28
80
Units
V
V
V
dB
%
pF
pF
pF
W
Y
A
DC
DC
DC
Conditions
V
V
V
V
V
V
V
No damage at all phase angles,
V
P
V
V
V
OUT
DS
DS
DS
GS
DD
DD
DD
DD
DS
DS
DS
= 10 V, I
= 28 V, I
= 6.0 V, V
= -8 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, V
= 28 V, V
= 28 V, V
= 90 W CW
D
D
D
DQ
DQ
DQ
DQ
gs
gs
gs
GS
= 28.8 mA
= 28.8 mA
= 1.0 A
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= 1.0 A
= 1.0 A
= 1.0 A, P
= 1.0 A,
= 2.0 V
USA Tel: [phone]
Units
˚C/W
Volts
Volts
in-oz
mA
www.cree.com/wireless
˚C
˚C
˚C
˚C
Fax: [phone].CREE
Fax: [phone]
Durham, NC 27703
OUT
4600 Silicon Drive
= P
SAT
Cree, Inc.