PD85004 STMicroelectronics, PD85004 Datasheet - Page 7

• Manufacturer Part Number: PD85004
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85004

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 50mA
• Voltage - Test: 13.6V
• Power - Output: 4W
• Package / Case: SOT-89
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 6000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 2A
• Power Dissipation Pd: 6W
• Operating Temperature Range: -65°C To +150°C
• Rf Transistor Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8291

PD85004
5
Figure 6.
Figure 8.
Figure 10. Drain current vs output power
-10
-12
-14
-16
-18
-20
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-2
-4
-6
-8
6
5
4
3
2
0
860
820
28
29
860 MHz
840
30
880
RF curves
Output power and drain efficiency
vs frequency
13.6 V / 50 mA / Pin = 19 dBm
Input return loss vs frequency
13.6 V / 50 mA
13.6 V / 50 mA
860
900 MHz
31
880
32
Frequency (MHz)
900
960 MHz
Output Power (dBm)
13.6V / 50mA
Frequency (MHz)
33
900
34
920
920
35
Pin=19 dBm
Pout
940
36
940
37
Eff
960
38
980
960
39
80
70
60
50
40
30
20
10
0
1000
40
Figure 7.
Figure 9.
Figure 11. Output power vs input power
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
40
38
36
34
32
30
28
26
24
0
860
12
13
860 MHz
1
14
880
Gain vs frequency
13.6 V / 50 mA
Gain vs output power
13.6 V / 50 mA
13.6 V / 50 mA
15
2
900 MHz
16
Gain vs Frequency
17
900
Input power (dBm)
Frequency (MHz)
13.6V / 50mA
3
Pout (W)
18
960 MHz
19
4
920
860 MHz
20
21
5
Pin=19 dBm
900 MHz
22
940
RF curves
23
6
960 MHz
24
7/18
960
25
7