PD20010TR-E STMicroelectronics, PD20010TR-E Datasheet - Page 4

• Manufacturer Part Number: PD20010TR-E
• Description: TRANS N-CH 40V POWERSO-10RF FORM
• Manufacturer: STMicroelectronics

Specifications of PD20010TR-E

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: 497-10096-2; PD20010TR-E

2
2.1
2.2
2.3
2.4
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Electrical characteristics
T
Static
Table 4.
Dynamic
Table 5.
ESD protection characteristics
Table 6.
Moisture sensitivity level
Table 7.
mismatch
CASE
Symbol
Symbol
V
V
C
C
P3dB
Load
DS(ON)
C
I
I
GS(Q)
G
DSS
GSS
h
OSS
RSS
ISS
D
P
= + 25 °C
V
V
V
V
All phase angles
V
V
V
V
V
V
V
DD
DD
DD
DD
GS
GS
GS
GS
GS
GS
Static
DS
Dynamic
ESD protection characteristics
Moisture sensitivity level
= 13.6 V, I
= 13.6 V, I
= 13.6 V, I
= 15.5 V, I
= 10 V
= 0V
= 5 V
= 10 V
= 0V
= 0V
= 0V
DQ
DQ
DQ
DQ
= 150 mA, P
= 300 mA, P
= 150 mA
= 150 mA, P
Test conditions
Test conditions
V
V
I
I
V
V
V
D
D
Human body model
DS
DS
DS
DS
DS
= 150 mA
= 1 A
Test conditions
Test conditions
Machine model
= 25 V
= 0 V
= 12.5 V
= 12.5 V
= 12.5 V
J-STD-020B
OUT
OUT
OUT
= 10 W, f = 2000 MHz
= P3dB, f = 2000 MHz
= 10 W, f = 2000 MHz
f = 2000 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min.
Min.
20:1
10
10
45
Typ.
Typ.
0.34
3.4
1.2
15
11
53
45
36
Max.
Max.
1
1
Rating
MSL 3
Class
M3
VSWR
2
Unit
Unit
dB
µA
µA
W
%
pF
pF
pF
V
V