PD55003-E STMicroelectronics, PD55003-E Datasheet - Page 8

TRANS RF N-CH FET LDMOST PWRSO10

PD55003-E

Manufacturer Part Number
PD55003-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD55003-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
2.5A
Current - Test
50mA
Voltage - Test
12.5V
Power - Output
3W
Package / Case
PowerSO-10 Exposed Bottom Pad
Configuration
Single
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
31.7 W
Maximum Operating Temperature
+ 165 C
Forward Transconductance Gfs (max / Min)
1 S
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
3W(Min)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
1S
Input Capacitance (typ)@vds
36@12.5VpF
Output Capacitance (typ)@vds
24@12.5VpF
Reverse Capacitance (typ)
2.4@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
52%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
31700mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5297-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55003-E
Manufacturer:
STM
Quantity:
218
Part Number:
PD55003-E
Manufacturer:
TI
Quantity:
600
Part Number:
PD55003-E
Manufacturer:
ST
Quantity:
20 000
Typical performance
8/29
Figure 10. Power gain vs output power
Figure 12. Output power vs bias current
Figure 14. Output power vs supply voltage
20
18
16
14
12
10
3.8
3.6
3.4
3.2
2.8
2.6
3.5
2.5
1.5
8
6
4
4
3
3
2
0
0
8
1
100
9
520 MHz
500 MHz
10
2
VDD, SUPPLY VOLTAGE (V)
Pout, OUTPUT POWER (W)
IDQ, BIAS CURRENT (mA)
200
500 MHz
480 MHz
11
3
300
480 MHz
12
520 MHz
4
480 MHz
500 MHz
400
13
5
520 MHz
Vdd = 12.5 V
Pin=17.9 dBm
Tune for Po=3 W
Idq = 50 mA
Pin=17.9 dBm
Tune for Po=3 W
Vdd = 12.5 V
Idq = 50 mA
Tune for Po=3 W
500
Doc ID 12273 Rev 3
14
6
600
15
7
Figure 11. Return loss vs output power
Figure 13. Drain efficiency vs bias current
Table 8.
-10
-20
-30
-40
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
8
0
0
9
100
1
480 MHz
480 MHz
Drain efficiency vs supply voltage
10
2
VDD, SUPPLY VOLTAGE (V)
Pout, OUTPUT POWER (W)
200
IDQ, BIAS CURRENT (mA)
520 MHz
11
520 MHz
3
PD55003-E, PD55003S-E
300
480 MHz
12
4
500 MHz
500 MHz
400
520 MHz
500 MHz
13
5
Vdd = 12.5 V
Idq = 50 mA
Tune for Po=3 W
Vdd = 12.5 V
Pin=17.9 dBm
Tune for Po=3 W
Idq = 50 mA
Pin=17.9 dBm
Tune for Po=3 W
500
14
6
600
15
7

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