PD20010-E STMicroelectronics, PD20010-E Datasheet - Page 7

• Manufacturer Part Number: PD20010-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD20010-E

• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 11dB
• Voltage - Rated: 40V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 40V
• Output Power (max): 15W(Typ)
• Power Gain (typ)@vds: 11dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 45@12.5VpF
• Output Capacitance (typ)@vds: 36@12.5VpF
• Reverse Capacitance (typ): 1.2@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 53%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 59000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Note:
Table 8.
Resin protrusions not included (max value: 0.15 mm per side)
Figure 5.
Dim.
A1
A2
A3
A4
D1
E1
E2
E3
R1
R2
T1
T2
D
G
a
b
E
F
L
T
c
PowerSO-10RF formed lead (gull wing) mechanical data
Package dimensions
13.85
2 deg
Min.
0.15
0.23
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
0.8
0
10 deg
5 deg
6 deg
mm.
Typ.
0.05
5.53
0.27
14.1
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
1
14.35
8 deg
Max.
0.25
5.65
0.32
0.25
0.1
3.6
1.4
9.6
7.6
9.5
7.5
6.3
1.1
0.134
0.046
0.005
0.212
0.008
0.370
0.290
0.544
0.365
0.286
0.231
0.030
2 deg
Min.
0.
Critical dimensions:
- Stand-off (A1)
- Overall width (L)
0.0019
10 deg
0.137
0.007
0.007
0.217
0.374
0.295
0.555
0.292
0.019
0.047
0.039
0.031
5 deg
6 deg
Inch.
Typ.
0.05
0.01
0.37
0.24
0.0038
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.565
0.375
0.294
0.247
0.042
8 deg
Max.
0.01
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