PD85006-E STMicroelectronics, PD85006-E Datasheet - Page 4

• Manufacturer Part Number: PD85006-E
• Description: TRANS N-CH LDMOST PWRSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD85006-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 200mA
• Voltage - Test: 13.6V
• Power - Output: 6W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Broadband Performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: 497-10293-5

Electrical characteristics
2
2.1
2.2
2.3
4/17
Electrical characteristics
T
Static
Table 4.
Dynamic
Table 5.
ESD protection characteristics
Table 6.
Symbol
CASE
V
V
mismatch
C
C
DS(ON)
I
C
Symbol
I
GS(Q)
GSS
DSS
OSS
RSS
ISS
Load
P
G
h
OUT
D
= +25 °C
P
V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
DS
Static
Dynamic
ESD protection characteristics
V
V
V
V
All phase angles
= 13.6 V
= 0V
= 5 V
= 10 V
= 0V
= 0V
= 0V
DD
DD
DD
DD
= 13.6 V, I
= 13.6 V, I
= 13.6 V, I
= 13.6 V, I
DQ
DQ
DQ
DQ
V
V
V
V
V
I
I
= 200 mA, P
= 200 mA, P
= 200 mA, P
= 200 mA, P
Human body model
D
Doc ID 16208 Rev 3
D
DS
Test conditions
DS
DS
DS
DS
Test conditions
Machine model
= 0.25 A
= 200 mA
Test conditions
= 25 V
= 0 V
= 13.6 V
= 13.6 V
= 13.6 V
IN
OUT
OUT
OUT
= 0.1 W, f = 870 MHz
= 5 W, f = 870 MHz
= 5 W, f = 870 MHz
= 5 W, f = 870 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
20:1
Min
Min
15
55
5
-
Typ
0.27
Typ
17
63
1.1
16
14
6
4
Max
PD85006-E
Max
-
1
1
Class
M3
2
VSW
Unit
Unit
dB
W
µA
µA
%
pF
pF
pF
R
V
V