PD54008S-E STMicroelectronics, PD54008S-E Datasheet - Page 7

IC TRANS RF PWR LDMOST PWRSO-10

PD54008S-E

Manufacturer Part Number
PD54008S-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD54008S-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
11.5dB
Voltage - Rated
25V
Current Rating
5A
Current - Test
150mA
Voltage - Test
7.5V
Power - Output
8W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
25V
Output Power (max)
8W(Min)
Power Gain (typ)@vds
11.5dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
2.5S
Input Capacitance (typ)@vds
91@7.5VpF
Output Capacitance (typ)@vds
68@7.5VpF
Reverse Capacitance (typ)
8.5@7.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
73000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-6714-5
PD54008S-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD54008S-E
Manufacturer:
ST
Quantity:
20 000
PD54008-E, PD54008S-E
4.1
Figure 6.
Figure 8.
Pout (W)
10
Nd (%)
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
1
0.2
500 MHz
PD54008-E
Output power vs. input power
Drain efficiency vs. output power
2
480 MHz
0.4
3
520 MHz
500 MHz
4
0.6
520 MHz
Pout (W)
Pin (W)
5
480 MHz
0.8
6
7
1
VDD = 7.5 V
IDQ = 150 mA
VDD = 7.5 V
IDQ = 150 mA
8
1.2
9
Doc ID 12271 Rev 2
1.4
10
Figure 7.
Figure 9.
Rtl (dB)
-10
-20
-30
-40
Gp (dB)
16
14
12
10
8
6
0
0
0
1
1
Power gain vs. output power
480 MHz
Return loss vs. output power
2
2
520 MHz
3
3
4
4
Pout (W)
Pout (W)
500 MHz
520 MHz
5
5
Typical performance
480 MHz
6
6
500 MHz
7
7
VDD = 7.5 V
IDQ = 150 mA
VDD = 7.5 V
IDQ = 150 mA
8
8
9
9
10
10
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