PD55035S-E STMicroelectronics, PD55035S-E Datasheet - Page 5

TRANS RF N-CH FET LDMOST PWRSO10

PD55035S-E

Manufacturer Part Number
PD55035S-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD55035S-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
16.9dB
Voltage - Rated
40V
Current Rating
7A
Current - Test
200mA
Voltage - Test
12.5V
Power - Output
35W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
40V
Output Power (max)
35W(Min)
Power Gain (typ)@vds
16.9dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
92@12.5VpF
Output Capacitance (typ)@vds
73@12.5VpF
Reverse Capacitance (typ)
6.1@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
62%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-5303-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55035S-E
Manufacturer:
IR
Quantity:
22 150
Part Number:
PD55035S-E
Manufacturer:
ST
Quantity:
20 000
PD55035-E, PD55035S-E
3
Impedance
Figure 2.
Table 7.
Freq. (MHz)
Current conventions
Impedance data
175
480
500
520
Doc ID 12331 Rev 2
3.34 - j 5.84
0.53 - j 1.08
0.45 - j 1.21
0.42 - j 1.20
Z
IN
(Ω)
1.67 + j 1.45
0.86 + j 0.25
1.05 + j 0.03
1.04 + j 0.15
Z
DL
(Ω)
Impedance
5/22

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