PD57070-E STMicroelectronics, PD57070-E Datasheet - Page 7

• Manufacturer Part Number: PD57070-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57070-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.7dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 70W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Min)
• Power Gain (typ)@vds: 14.7dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 3
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 91@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3.8@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-6721-5; PD57070-E

PD57070-E, PD57070S-E
Figure 7.
Figure 9.
18
16
14
12
10
-10
-15
-20
-25
-30
8
-5
0
0
0
Power gain vs output power
Input return loss vs output power
20
20
925 MHz
945 MHz
40
40
960 MHz
890 MHz
Pout (W )
Pout (W )
60
60
Vdd = 28 V
Idq = 250 m A
Vdd = 28 V
Idq = 250 m A
80
80
960 MHz
925 MHz
945 MHz
890 MHz
Doc ID 12528 Rev 2
100
100
Figure 8.
Figure 10. Output power vs gate-source
100
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
925 MHz
890 MHz
Efficiency vs output power
voltage
945 MHz
20
1
960 MHz
40
2
Pout (W )
Vgs (V)
Typical performance
945, 960 MHz
60
3
890 MHz
Vdd = 28 V
Idq = 250 m A
Vdd = 28 V
Idq = 250 m A
Pin = 2.8 W
80
4
925 MHz
100
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