PD85035S-E STMicroelectronics, PD85035S-E Datasheet - Page 7

TRANS RF POWER LDMOST N-CH

PD85035S-E

Manufacturer Part Number
PD85035S-E
Description
TRANS RF POWER LDMOST N-CH
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD85035S-E

Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
8A
Current - Test
350mA
Voltage - Test
13.6V
Power - Output
15W
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
497-8300
497-8300-5
497-8300
PD85035S-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85035S-E
Manufacturer:
QTRONIX
Quantity:
2
Part Number:
PD85035S-E
Manufacturer:
ST
Quantity:
20 000
PD85035-E, PD85035S-E
Figure 7.
Figure 9.
20
18
16
14
12
10
22
20
18
16
14
12
10
8
6
4
2
0
0
0
Idq = 150mA
1
10
Pout and Id vs V
Gain vs Pout and bias current
Pout
Freq = 870 MHz
2
Pin = 200mW
Vdd = 13.6V
20
Idq = 350mA
Vgs (V)
Id
Pout (W)
3
Freq = 870 MHz
30
Vdd = 13.6V
GS
4
40
Idq = 500mA
5
50
6
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
60
Figure 8.
Figure 10. Gain and efficiency vs Pout
20
19
18
17
16
15
14
13
12
11
10
30
25
20
15
10
5
0
0
0
5
Freq = 870 MHz
Gain
Pin = 400mW
Vdd = 13.6V
Pout and Id vs V
1
Pout
10
Freq = 870 MHz
15
Eff
Idq = 350mA
Vdd = 13.6V
2
20
Id
Pout (W)
Vgs (V)
25
3
30
Typical performance
GS
4
35
40
5
45
50
6
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
7/15

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