SD57030 STMicroelectronics, SD57030 Datasheet

TRANSISTOR RF PWR LDMOST M243

SD57030

Manufacturer Part Number
SD57030
Description
TRANSISTOR RF PWR LDMOST M243
Manufacturer
STMicroelectronics
Datasheet

Specifications of SD57030

Transistor Type
LDMOS
Frequency
945MHz
Gain
15dB
Voltage - Rated
65V
Current Rating
4A
Current - Test
50mA
Voltage - Test
28V
Power - Output
30W
Package / Case
M243
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
497-5475
SD57030

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SD57030
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
SD57030
Manufacturer:
ST
Quantity:
20 000
Part Number:
SD57030-01
Manufacturer:
ST
Quantity:
20 000
Part Number:
SD57030-1
Manufacturer:
ST
0
Table 1.
Features
Description
The SD57030 is a common source N-channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57030 is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for base
station applications requiring high linearity.
August 2007
Excellent thermal stability
Common source configuration
P
BeO free package
Internal input matching
In compliance with the 2002/95/EC european
directive
OUT
= 30W with 13dB gain @ 945MHz
Order code
Device summary
SD57030
Package
M243
Rev 7
Figure 1.
1. Drain
2. Gate
Pin connection
Epoxy sealed
RF power transistor
the LdmoST family
M243
1
2
Branding
SD57030
SD57030
3. Source
3
www.st.com
1/11
11

Related parts for SD57030

SD57030 Summary of contents

Page 1

... The SD57030 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode ideal for base station applications requiring high linearity. ...

Page 2

... Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Typical performance (CW Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Text circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 SD57030 ...

Page 3

... SD57030 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T Symbol V (BR)DSS V DGR DISS Tj T STG 1.2 Thermal data Table 2. Thermal data Symbol R thJC CASE Parameter Drain-Source voltage Drain-Gate voltage ( MΩ) GS Gate-Source voltage Drain current Power dissipation (@ Tc = 70°C) Max. operating junction temperature ...

Page 4

... All phase angles 4/ Test conditions MHz MHz MHz DS Test conditions 945 MHz 945 MHz DQ OUT 945 MHz DQ OUT 945 MHz DQ OUT SD57030 Min Typ Max Unit 65 V µA 1 µA 1 2.0 5.0 V 1.3 V 1.8 mho 2.7 pF Min Typ Max Unit 10:1 VSWR ...

Page 5

... SD57030 3 Typical performance (CW) Figure 2. Output power vs input power 0.2 0.4 0.6 Pin, INPUT POWER (W) Figure 4. Output power vs gate source voltage 35 f= 945 MHz 30 Vdd Idq Vgs, GATE-SOURCE VOLTAGE (V) Figure 945 MHz Vdd Idq 0.8 1 1.2 1.4 Figure Typical performance (CW) Power gain and efficiency vs ...

Page 6

... Test circuit 4 Test circuit Figure 6. Test circuit schematic Dimensions at component symbols are reference for component placement. 2 Gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ. 3 Dimensions of input and output component from edge of transmission lines. 6/11 SD57030 + OUT ...

Page 7

... SD57030 Table 5. Test circuit component part list Component C19 C18, C14 C17 C16, C12, C11,C1 C15 C13 C9 C7, C6 FB2, FB1 L2, L1 PCB Description 200 µF / 63V ALLUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR 0.1 µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 µ ...

Page 8

... Text circuit layout 5 Text circuit layout Figure 7. Test fixture Figure 8. Test circuit photomaster 8/11 SD57030 SD57030 6.4 inches SD57030 ...

Page 9

... SD57030 6 Package mechanical data Table 6. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data Dim Figure 9. Package dimensions Controlling dimension: Inches mm. Min Typ Max 5.21 5.72 5.46 6.48 5.59 6.10 14.27 20.07 20.57 8.89 9.40 0.10 0.15 3.18 4.45 1.83 2.24 1.27 1.78 ...

Page 10

... Revision history 7 Revision history Table 7. Document revision history Date 24-Mar-2003 11-Jul-2007 24-Aug-2007 10/11 Revision 5 First Issue. 6 Document reformatted, added lead free info 7 Cover page title updated SD57030 Changes ...

Page 11

... SD57030 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords