SD2931-10 STMicroelectronics, SD2931-10 Datasheet - Page 7

TRANS RF N-CH HF/VHF/UHF M174

SD2931-10

Manufacturer Part Number
SD2931-10
Description
TRANS RF N-CH HF/VHF/UHF M174
Manufacturer
STMicroelectronics
Datasheets

Specifications of SD2931-10

Transistor Type
N-Channel
Frequency
175MHz
Gain
15dB
Voltage - Rated
125V
Current Rating
20A
Current - Test
250mA
Voltage - Test
50V
Power - Output
150W
Package / Case
M174
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
125 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
389000 mW
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
HF/VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
125V
Output Power (max)
150W
Power Gain (typ)@vds
15dB
Frequency (max)
230MHz
Package Type
Case M-174
Pin Count
4 +Tab
Forward Transconductance (typ)
6S
Input Capacitance (typ)@vds
480@50VpF
Output Capacitance (typ)@vds
190@50VpF
Reverse Capacitance (typ)
18@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
65%
Mounting
Screw
Number Of Elements
1
Power Dissipation (max)
389000mW
Vswr (max)
10(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5467
SD2931-10

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SD2931-10
Manufacturer:
ST
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Quantity:
20 000
Part Number:
SD2931-10W
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SD2931-10
4
Figure 3.
Figure 5.
Figure 7.
(1) Current in this area may be limited by R
10000
1000
100
1.12
1.08
1.04
0.96
0.92
0.88
0.84
10
100
0.8
10
1
1
0
-25
1
Vds= 10 V
Typical performance
Capacitance vs drain-source
voltage
Gate-source voltage vs case
temperature
Safe operating area
(1)
10
VDS, DRAIN-SOURCE VOLTAGE (V)
0
Tc, CASE TEMPERATURE (°C)
10
20
25
Coss
ds(on)
Ciss
Vds(V)
Id =11A
30
50
Id =10A
Id =.25A
Crss
100
Id =9A
75
40
Id =7A
f =1MHz
Id =.1A
Id =2A
Id =5A
Doc ID 7076 Rev 7
Id =4A
Id =1A
100
1000
50
Figure 4.
Figure 6.
20
15
10
5
0
0.56
0.52
0.48
0.44
0.6
2
25
VDS = 10 V
2.5
Drain current vs gate voltage
Maximum thermal resistance vs
case temperature
35
VGS, GATE-SOURCE VOLTAGE (V)
3
Tc, CASE TEMPERATURE (°C)
45
3.5
4
55
Typical performance
Tc=+25 °C
4.5
65
5
Tc=+80 °C
75
Tc=-20 °C
5.5
7/17
85
6

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