NE3508M04-T2-A CEL, NE3508M04-T2-A Datasheet - Page 4

• Manufacturer Part Number: NE3508M04-T2-A
• Description: AMP HJ-FET 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE3508M04-T2-A

• Transistor Type: HFET
• Frequency: 2GHz
• Gain: 14dB
• Voltage - Rated: 4V
• Current Rating: 120mA
• Noise Figure: 0.45dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 18dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Polarity: N-Channel
• Power Dissipation: 125 mW
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Forward Transconductance Gfs (max / Min): 55 mS
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

4
Remark The graphs indicate nominal characteristics.
–10
–20
–30
–40
–50
–60
–70
–80
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
40
30
20
10
OUTPUT POWER, IM
vs. INPUT POWER
–25 –20 –15
0
0
f = 2.5 GHz
V
DS
I
D
P
= 2 V
out (2 tone)
Input Power P
10
IM
–10
Drain Current I
3 (L)
–5
OIP
20
0
3,
in (2 tone)
f = 2.5 GHz,
I
D
3
DRAIN CURRENT
= 34 dBm
IM
= 30 mA (Non-RF)
5
D
3 (H)
(mA)
(dBm)
IIP
10
30
3
= 17.5 dBm
G
NF
15 20
V
a
DS
min
Data Sheet PG10586EJ01V0DS
=
3 V
40
25
20
18
16
14
12
10
8
6
4
2
0
50
45
40
35
30
25
20
15
10
5
0
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
f = 2.5 GHz
I
D
= 10 mA
Drain to Source Voltage V
1.5
2.0
NF
G
min
a
2.5
NE3508M04
DS
3.0
(V)
3.5
20
18
16
14
12
10
8
6
4
2
0